Effects of self-heating on performance ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Effects of self-heating on performance degradation in AlGaN/GaN-based devices
Author(s) :
Benbakhti, Brahim [Auteur]
University of Glasgow
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kalna, Karol [Auteur]
University of Glasgow
Rousseau, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
University of Glasgow
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kalna, Karol [Auteur]
University of Glasgow
Rousseau, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
IEEE Transactions on Electron Devices
Pages :
2178-2185
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2009-10
ISSN :
0018-9383
English keyword(s) :
Gallium nitride
Substrates
Mathematical model
Aluminum gallium nitride
Temperature measurement
Lattices
Equations
Substrates
Mathematical model
Aluminum gallium nitride
Temperature measurement
Lattices
Equations
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
A self-consistent electrothermal transport model that couples electrical and thermal transport equations is established and applied to AlGaN/GaN device structures grown on the following three different substrate materials: ...
Show more >A self-consistent electrothermal transport model that couples electrical and thermal transport equations is established and applied to AlGaN/GaN device structures grown on the following three different substrate materials: 1) SiC; 2) Si; and 3) sapphire . Both the resultant I - V characteristics and surface temperatures are compared to experimental I - V measurements and Raman spectroscopy temperature measurements. The very consistent agreement between measurements and simulations confirms the validity of the model and its numerical rendition. The results explain why the current saturation in measured I - V characteristics occurs at a much lower electric field than that for the saturation of electron drift velocity. The marked difference in saturated current levels for AlGaN/GaN structures on SiC, Si, and sapphire substrates is directly related to the different self-heating levels that resulted from the different biasing conditions and the distinctive substrate materials.Show less >
Show more >A self-consistent electrothermal transport model that couples electrical and thermal transport equations is established and applied to AlGaN/GaN device structures grown on the following three different substrate materials: 1) SiC; 2) Si; and 3) sapphire . Both the resultant I - V characteristics and surface temperatures are compared to experimental I - V measurements and Raman spectroscopy temperature measurements. The very consistent agreement between measurements and simulations confirms the validity of the model and its numerical rendition. The results explain why the current saturation in measured I - V characteristics occurs at a much lower electric field than that for the saturation of electron drift velocity. The marked difference in saturated current levels for AlGaN/GaN structures on SiC, Si, and sapphire substrates is directly related to the different self-heating levels that resulted from the different biasing conditions and the distinctive substrate materials.Show less >
Language :
Anglais
Popular science :
Non
Source :