Title :

In-plane polarities of nonpolar wurtzite epitaxial films deposited on m- and r-plane sapphire substrates

Author(s) :

Vennéguès, Philippe [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Zhu, Tiankai [Auteur]
Bougrioua, Zahia [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Martin, Denis [Auteur]
Zuniga-Perez, J. [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Grandjean, Nicolas [Auteur]

Journal title :

Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes

Pages :

090211-1-3

Publication date :

2009

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

The in-plane polarities of GaN and ZnO non-polar films deposited on r - and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to ...
Show more >The in-plane polarities of GaN and ZnO non-polar films deposited on r - and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in the first case and nonpolar in the second case. Furthermore, on r-sapphire where GaN and ZnO have a unique polarity, the directions of the polar c-axis relative to a reference sense in the substrate surface are opposite for both materials. This difference may be related to the nitridation which is the first step of the of III-nitride growth.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL