Arsenic-segregated rare earth silicide ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI
Auteur(s) :
Larrieu, G. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Yarekha, Dmytro [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Breil, N. [Auteur]
IBM
Faynot, Olivier [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Yarekha, Dmytro [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Breil, N. [Auteur]
IBM
Faynot, Olivier [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Titre de la revue :
IEEE Electron Device Letters
Pagination :
1266-1268
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2009
ISSN :
0741-3106
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Electronique
Résumé en anglais : [en]
As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, ...
Lire la suite >As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, coupled with a dopant segregation based on arsenic (As$^+$) implantation. Both erbium (Er) and ytterbium (Yb) have been considered in the implant-before-silicide (IBS) and implant-to-silicide flavors. It is shown that the two schemes coupled with a limited thermal budget (500°C) produce an SB below the target of 0.1 eV. The implementation of IBS arsenic-segregated YbSi$_{1.8}$ junctions in an n-type SB-MOSFET is demonstrated for the first time resulting in a current-drive improvement of more than one decade over the dopant-free counterpart.Lire moins >
Lire la suite >As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, coupled with a dopant segregation based on arsenic (As$^+$) implantation. Both erbium (Er) and ytterbium (Yb) have been considered in the implant-before-silicide (IBS) and implant-to-silicide flavors. It is shown that the two schemes coupled with a limited thermal budget (500°C) produce an SB below the target of 0.1 eV. The implementation of IBS arsenic-segregated YbSi$_{1.8}$ junctions in an n-type SB-MOSFET is demonstrated for the first time resulting in a current-drive improvement of more than one decade over the dopant-free counterpart.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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