Title :

1.55 µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

Author(s) :

Tan, Kianhuan [Auteur]
National University of Singapore [NUS]
Yoon, Soon [Auteur]
National University of Singapore [NUS]
Loke, Wan Khai [Auteur]
National University of Singapore [NUS]
Wicaksono, Satrio [Auteur]
National University of Singapore [NUS]
Xu, Zhichuan [Auteur]
Nanyang Technological University [Singapour] [NTU]
Ng, Tien Khee [Auteur]
King Abdullah University of Science and Technology [Saudi Arabia] [KAUST]
Lew, Kim Luong [Auteur]
Universiti Tunku Abdul Rahman [UTAR]
Saadsaoud, N. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chazelas, Jean [Auteur]
Thales DMS France, SAS

Journal title :

Applied Physics Letters

Pages :

113513-1-3

Publisher :

American Institute of Physics

Publication date :

2008

ISSN :

0003-6951

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in ...
Show more >We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was measured from 800 to 1700 nm. The GaNAsSb layer has a refractive index value of 3.42 at 1.55 μm wavelength. The propagation loss measured using the Fabry-Ṕrot resonance method was found to be affected by nitrogen-related defect absorption.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL