Templates for LaAlO3 epitaxy on silicon
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Templates for LaAlO3 epitaxy on silicon
Auteur(s) :
Boulenc, Pierre [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut Supérieur de l'Electronique et du Numérique - Lille [ISEN-Lille]
Devos, Isabelle [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut Supérieur de l'Electronique et du Numérique - Lille [ISEN-Lille]
STMicroelectronics [Crolles] [ST-CROLLES]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut Supérieur de l'Electronique et du Numérique - Lille [ISEN-Lille]
Devos, Isabelle [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut Supérieur de l'Electronique et du Numérique - Lille [ISEN-Lille]
Titre de la revue :
Microelectronics Reliability
Pagination :
709-713
Éditeur :
Elsevier
Date de publication :
2007
ISSN :
0026-2714
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
As direct epitaxy of crystalline LaAlO3 on silicon has not been realized yet, we investigated the use of a template between the high-κ and the substrate. We performed calculations in the Density Functional Theory framework ...
Lire la suite >As direct epitaxy of crystalline LaAlO3 on silicon has not been realized yet, we investigated the use of a template between the high-κ and the substrate. We performed calculations in the Density Functional Theory framework for two possible templates: a Sr0.5O monolayer and a 0.5 nm thick γ-Al2O3(0 0 1) layer. We firstly found that in the Sr0.5O monolayer case, care must be taken for the LaAlO3 starting sequence in order to expect good band offsets with silicon. In the γ-Al2O3 case, a more complex engineering of the interface is needed. Nonetheless, we found stable interfaces and a surface reconstruction in agreement with experimental observations. Moreover, these interfaces exhibit insulating properties and insight calculations for a Si–γ-Al2O3–LaAlO3 superstructure lead us to a 1.9 eV conduction band offset.Lire moins >
Lire la suite >As direct epitaxy of crystalline LaAlO3 on silicon has not been realized yet, we investigated the use of a template between the high-κ and the substrate. We performed calculations in the Density Functional Theory framework for two possible templates: a Sr0.5O monolayer and a 0.5 nm thick γ-Al2O3(0 0 1) layer. We firstly found that in the Sr0.5O monolayer case, care must be taken for the LaAlO3 starting sequence in order to expect good band offsets with silicon. In the γ-Al2O3 case, a more complex engineering of the interface is needed. Nonetheless, we found stable interfaces and a surface reconstruction in agreement with experimental observations. Moreover, these interfaces exhibit insulating properties and insight calculations for a Si–γ-Al2O3–LaAlO3 superstructure lead us to a 1.9 eV conduction band offset.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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