Title :

Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement

Author(s) :

Diarra, Mamadou [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Niquet, Yann-Michel [Auteur]
Département de Recherche Fondamentale sur la Matière Condensée [DRFMC]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Physical Review B: Condensed Matter and Materials Physics (1998-2015)

Pages :

045301

Publisher :

American Physical Society

Publication date :

2007

ISSN :

1098-0121

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

English abstract : [en]

Calculations of the electronic states of donor and acceptor impurities in nanowires show that the ionization energy of the impurities is strongly enhanced with respect to the bulk, above all when the wires are embedded in ...
Show more >Calculations of the electronic states of donor and acceptor impurities in nanowires show that the ionization energy of the impurities is strongly enhanced with respect to the bulk, above all when the wires are embedded in a material with a low dielectric constant. In free-standing nanowires with diameter below 10nm, the ionization of the impurities at 300K is strongly reduced and heavy doping is necessary to obtain conductive systems. These results imply that the critical density for metal-nonmetal transitions is not the same as in the bulk. Experiments are proposed to test the predictions.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL