Title :

Effects on linearity in Ka band of single or double recess PHEMTs

Author(s) :

Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bue-Erkmen, Frédéric [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delemotte, Pascal [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Crosnier, Yves [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Carnez, Bernard [Auteur]
United Monolithic Semiconductors [UMS]
Pons, D. [Auteur]
United Monolithic Semiconductors [UMS]

Journal title :

IEEE Microwave and Guided Wave Letters

Pages :

267-269

Publisher :

Institute of Electrical and Electronics Engineers (IEEE)

Publication date :

2000-07

ISSN :

1051-8207

English keyword(s) :

Linearity
Power generation
Voltage
Quadrature amplitude modulation
Impedance
Current density
Associate members
Topology
TV
Video on demand

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

The effects of the gate recess topologies on the linearity performance of PHEMT's have been investigated in the Ka band. The authors highlight the reasons why, at a given output power level, the double recessed device ...
Show more >The effects of the gate recess topologies on the linearity performance of PHEMT's have been investigated in the Ka band. The authors highlight the reasons why, at a given output power level, the double recessed device exhibits a very large improvement of its intermodulation performance as its drain source bias voltage is increased whereas its linearity is inferior to that of the single recessed device at low drain source bias voltage. The effect of the load impedance on the linearity behavior has also been investigated. At a given output power the load impedance contour of the double recess structure is shown to exhibit a much larger variation of the intermodulation ratio than that of the single recess structure.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL