Quantum confinement in germanium nanocrystals
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Quantum confinement in germanium nanocrystals
Auteur(s) :
Niquet, Yann-Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lannoo, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lannoo, Michel [Auteur]
Titre de la revue :
Applied Physics Letters
Pagination :
1182-1184
Éditeur :
American Institute of Physics
Date de publication :
2000
ISSN :
0003-6951
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
The electronic structure of Ge nanocrystals is studied using a sp3 tight binding description. Analytical laws for the confinement energies, valid over the whole range of sizes, are derived. We validate our results with ab ...
Lire la suite >The electronic structure of Ge nanocrystals is studied using a sp3 tight binding description. Analytical laws for the confinement energies, valid over the whole range of sizes, are derived. We validate our results with ab initio calculations in the local density approximation for smaller clusters. Comparing to experimental data, we conclude that, similar to the case of silicon: (a) the blue-green photoluminescence (PL) of Ge nanocrystals comes from defects in the oxide and (b) the size dependent PL in the near infrared probably involves a deep trap in the gap of the nanocrystals. We predict that the radiative lifetimes remain long in spite of the small difference (0.14 eV) between direct and indirect gaps of bulk Ge.Lire moins >
Lire la suite >The electronic structure of Ge nanocrystals is studied using a sp3 tight binding description. Analytical laws for the confinement energies, valid over the whole range of sizes, are derived. We validate our results with ab initio calculations in the local density approximation for smaller clusters. Comparing to experimental data, we conclude that, similar to the case of silicon: (a) the blue-green photoluminescence (PL) of Ge nanocrystals comes from defects in the oxide and (b) the size dependent PL in the near infrared probably involves a deep trap in the gap of the nanocrystals. We predict that the radiative lifetimes remain long in spite of the small difference (0.14 eV) between direct and indirect gaps of bulk Ge.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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