Monte Carlo simulation of electron transport ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Monte Carlo simulation of electron transport in narrow gap heterostructures
Auteur(s) :
Thobel, Jean-Luc [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bonno, Olivier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dessenne, François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boutry, Hervé [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bonno, Olivier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dessenne, François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boutry, Hervé [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
Journal of Applied Physics
Pagination :
5286-5295
Éditeur :
American Institute of Physics
Date de publication :
2002
ISSN :
0021-8979
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
A Monte Carlo method is proposed for the study of in-plane electron transport in narrow gap heterostructures. Special attention is paid to the consequences of the strong nonparabolicity of the conduction band. The electron ...
Lire la suite >A Monte Carlo method is proposed for the study of in-plane electron transport in narrow gap heterostructures. Special attention is paid to the consequences of the strong nonparabolicity of the conduction band. The electron states are calculated within the framework of envelope function theory, which leads to a Schrödinger equation with an energy-dependent effective mass. This equation is solved in a numerically efficient way by including a standard eigenvalue solver in an iterative method. The mixing between conduction and valence band states is taken into account, at an approximate level, through a “Bloch overlap factor,” defined by analogy with the case of three-dimensional transport. This model was applied to a typical AlSb/InAs single well structure, and realistic results were obtained. The important role played by the Bloch overlap factor is demonstrated. When it is neglected, the mobility is strongly underestimated. A more sophisticated double well structure was also investigated. It is intended to reduce impact ionization, thanks to transfer toward the thinner well. This transfer is found to depend strongly on the potential profileLire moins >
Lire la suite >A Monte Carlo method is proposed for the study of in-plane electron transport in narrow gap heterostructures. Special attention is paid to the consequences of the strong nonparabolicity of the conduction band. The electron states are calculated within the framework of envelope function theory, which leads to a Schrödinger equation with an energy-dependent effective mass. This equation is solved in a numerically efficient way by including a standard eigenvalue solver in an iterative method. The mixing between conduction and valence band states is taken into account, at an approximate level, through a “Bloch overlap factor,” defined by analogy with the case of three-dimensional transport. This model was applied to a typical AlSb/InAs single well structure, and realistic results were obtained. The important role played by the Bloch overlap factor is demonstrated. When it is neglected, the mobility is strongly underestimated. A more sophisticated double well structure was also investigated. It is intended to reduce impact ionization, thanks to transfer toward the thinner well. This transfer is found to depend strongly on the potential profileLire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :