0.12 μm transferred-substrate In/sub ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer
Author(s) :
Bollaert, Sylvain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
lepilliet, sl [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cappy, Alain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Jalaguier, E. [Auteur]
Pocas, S. [Auteur]
Aspar, B. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
lepilliet, sl [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cappy, Alain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Jalaguier, E. [Auteur]
Pocas, S. [Auteur]
Aspar, B. [Auteur]
Journal title :
IEEE Electron Device Letters
Pages :
73-75
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2002-02
ISSN :
0741-3106
English keyword(s) :
HEMTs
MODFETs
Indium compounds
Indium phosphide
Silicon
Indium gallium arsenide
Substrates
Cutoff frequency
Electron mobility
Schottky barriers
MODFETs
Indium compounds
Indium phosphide
Silicon
Indium gallium arsenide
Substrates
Cutoff frequency
Electron mobility
Schottky barriers
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
New In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2-in Silicon substrate with 0.12 μm T-shaped gate length. ...
Show more >New In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2-in Silicon substrate with 0.12 μm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic transconductance up to 770 mS/mm. An extrinsic current gain cutoff frequency f T of 185 GHz is obtained. That result is the first reported for In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As TS-HEMTs on Silicon substrate.Show less >
Show more >New In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2-in Silicon substrate with 0.12 μm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic transconductance up to 770 mS/mm. An extrinsic current gain cutoff frequency f T of 185 GHz is obtained. That result is the first reported for In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As TS-HEMTs on Silicon substrate.Show less >
Language :
Anglais
Popular science :
Non
Source :