Modeling and experimental validation of ...
Document type :
Communication dans un congrès avec actes
Title :
Modeling and experimental validation of silicon nanotip oxidation : towards a nanoelectromechanical filter application
Author(s) :
Agache, Vincent [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bigotte, Patrice [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Legrand, Bernard [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
SENEZ, Vincent [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Buchaillot, Lionel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Collard, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bigotte, Patrice [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Legrand, Bernard [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
SENEZ, Vincent [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Buchaillot, Lionel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Collard, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
12th International Conference on Solid-State Sensors
City :
Boston
Country :
Etats-Unis d'Amérique
Start date of the conference :
2003-06-08
Book title :
Proceedings of the 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS'03
Publisher :
IEEE, Piscataway, NJ, USA
Publication date :
2003
English keyword(s) :
Silicon
Oxidation
Filters
Nanoscale devices
Shape
Solid modeling
Geometry
Frequency
Atomic force microscopy
Semiconductor device modeling
Oxidation
Filters
Nanoscale devices
Shape
Solid modeling
Geometry
Frequency
Atomic force microscopy
Semiconductor device modeling
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
This study aims at modeling the thermal oxidation of silicon pedestals leading to the formation of sharp silicon tips. The model is used to determine optimum process parameters taking into account the initial shape of the ...
Show more >This study aims at modeling the thermal oxidation of silicon pedestals leading to the formation of sharp silicon tips. The model is used to determine optimum process parameters taking into account the initial shape of the silicon pedestal shapes, and the geometry of the desired tip. Experimental validation has been performed for several initial silicon pedestal shapes at 1000/spl deg/C and 1100/spl deg/C under dry oxidation conditions, leading to formation of sharp silicon tips. The motivation of this study aims at designing and fabricating a nanoelectromechanical filter device. Its vibrating part consists in a silicon nanotip, covered with a thin gold layer, the geometrical features of which affect the center frequency of the nanofilter device.Show less >
Show more >This study aims at modeling the thermal oxidation of silicon pedestals leading to the formation of sharp silicon tips. The model is used to determine optimum process parameters taking into account the initial shape of the silicon pedestal shapes, and the geometry of the desired tip. Experimental validation has been performed for several initial silicon pedestal shapes at 1000/spl deg/C and 1100/spl deg/C under dry oxidation conditions, leading to formation of sharp silicon tips. The motivation of this study aims at designing and fabricating a nanoelectromechanical filter device. Its vibrating part consists in a silicon nanotip, covered with a thin gold layer, the geometrical features of which affect the center frequency of the nanofilter device.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :