Strain determination in silicon microstructures ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Strain determination in silicon microstructures by combined TEM/CBED, process simulation and micro-Raman spectroscopy
Auteur(s) :
Senez, V. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Armigliato, A. [Auteur]
Istituto per la Microelettronica e i Microsistemi [Bologna] [IMM]
de Wolf, I. [Auteur]
Carnevale, G. [Auteur]
STMicroelectronics [Agrate Brianza] [ST-AGRATE]
Balboni, R. [Auteur]
Istituto per la Microelettronica e i Microsistemi [Bologna] [IMM]
Frabboni, S. [Auteur]
Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia [UNIMORE]
Benedetti, A. [Auteur]
University of Sheffield [Sheffield]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Armigliato, A. [Auteur]
Istituto per la Microelettronica e i Microsistemi [Bologna] [IMM]
de Wolf, I. [Auteur]
Carnevale, G. [Auteur]
STMicroelectronics [Agrate Brianza] [ST-AGRATE]
Balboni, R. [Auteur]
Istituto per la Microelettronica e i Microsistemi [Bologna] [IMM]
Frabboni, S. [Auteur]
Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia [UNIMORE]
Benedetti, A. [Auteur]
University of Sheffield [Sheffield]
Titre de la revue :
Journal of Applied Physics
Pagination :
5574-5583
Éditeur :
American Institute of Physics
Date de publication :
2003
ISSN :
0021-8979
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Mécanique [physics.med-ph]/Matériaux et structures en mécanique [physics.class-ph]
Physique [physics]/Physique [physics]/Instrumentations et Détecteurs [physics.ins-det]
Sciences de l'ingénieur [physics]/Mécanique [physics.med-ph]/Matériaux et structures en mécanique [physics.class-ph]
Physique [physics]/Physique [physics]/Instrumentations et Détecteurs [physics.ins-det]
Résumé en anglais : [en]
Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual ...
Lire la suite >Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design homemade tool, IMPACT, is upgraded and optimized to yield strain fields in deep submicron complementary metal–oxide–semiconductor devices. Residual strain in the silicon substrate is measured with micro-Raman spectroscopy (μ-RS) and/or convergent beam electron diffraction (CBED) for large (25 μm) and medium size (2 μm), while only CBED is used for deep submicron STI (0.22 μm). We propose a methodology combining CBED and technology computer aided design (TCAD) with μ-RS to assess the accuracy of the CBED measurements and TCAD calculations on the widest structures. The method is extended to measure (by CBED) and calculate (by TCAD) the strain tensor in the smallest structures, out of the reach of the μ-RS technique. The capability of determining, by both measurement and calculation, the strain field distribution in the active regions of deep submicron devices is demonstrated. In particular, it is found that for these structures an elastoplastic model for Si relaxation must be assumed.Lire moins >
Lire la suite >Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design homemade tool, IMPACT, is upgraded and optimized to yield strain fields in deep submicron complementary metal–oxide–semiconductor devices. Residual strain in the silicon substrate is measured with micro-Raman spectroscopy (μ-RS) and/or convergent beam electron diffraction (CBED) for large (25 μm) and medium size (2 μm), while only CBED is used for deep submicron STI (0.22 μm). We propose a methodology combining CBED and technology computer aided design (TCAD) with μ-RS to assess the accuracy of the CBED measurements and TCAD calculations on the widest structures. The method is extended to measure (by CBED) and calculate (by TCAD) the strain tensor in the smallest structures, out of the reach of the μ-RS technique. The capability of determining, by both measurement and calculation, the strain field distribution in the active regions of deep submicron devices is demonstrated. In particular, it is found that for these structures an elastoplastic model for Si relaxation must be assumed.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
Fichiers
- https://hal.archives-ouvertes.fr/hal-00146408/document
- Accès libre
- Accéder au document
- https://hal.archives-ouvertes.fr/hal-00146408/document
- Accès libre
- Accéder au document
- document
- Accès libre
- Accéder au document
- Senez_2003_1.1611287.pdf
- Accès libre
- Accéder au document