A new empirical nonlinear model for sub-250 nm channel MOSFET

Siligaris, Alexandre; Dambrine, Gilles; Schreurs, Dominique; Danneville, François

Document type :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1109/LMWC.2003.815687

Title :

A new empirical nonlinear model for sub-250 nm channel MOSFET

Author(s) :

Siligaris, Alexandre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dambrine, Gilles [Auteur]

Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Circuits Systèmes Applications des Micro-ondes - IEMN [CSAM - IEMN]
Schreurs, Dominique [Auteur]
Catholic University of Leuven = Katholieke Universiteit Leuven [KU Leuven]
Danneville, François [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

IEEE Microwave and Wireless Components Letters

Pages :

449-451

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2003

ISSN :

1531-1309

English keyword(s) :

Charge conservation
large signal measurements
MOS transistors
nonlinear RF modeling

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The ...
Show more >An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge conservation is taken into account, as the capacitances derive from a single charge expression. The model's parameters are first extracted, prior the model's implementation into a circuit simulator. It is validated through dc, ac, and RF large signal measurements compared to the simulation.Show less >

Language :

Anglais

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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