Effects of grain boundaries, field dependent ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Effects of grain boundaries, field dependent mobility and interface state traps on the characteristics of pentacene thin film transistor
Auteur(s) :
Bolognesi, A. [Auteur]
Università degli Studi di Roma Tor Vergata [Roma] = University of Rome Tor Vergata
Berliocchi, M. [Auteur]
Università degli Studi di Roma Tor Vergata [Roma] = University of Rome Tor Vergata
Manenti, M. [Auteur]
Università degli Studi di Roma Tor Vergata [Roma] = University of Rome Tor Vergata
Di Carlo, Aldo [Auteur]
Università degli Studi di Roma Tor Vergata [Roma] = University of Rome Tor Vergata
Lugli, Paolo [Auteur]
Lmimouni, Kamal [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dufour, Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Università degli Studi di Roma Tor Vergata [Roma] = University of Rome Tor Vergata
Berliocchi, M. [Auteur]
Università degli Studi di Roma Tor Vergata [Roma] = University of Rome Tor Vergata
Manenti, M. [Auteur]
Università degli Studi di Roma Tor Vergata [Roma] = University of Rome Tor Vergata
Di Carlo, Aldo [Auteur]
Università degli Studi di Roma Tor Vergata [Roma] = University of Rome Tor Vergata
Lugli, Paolo [Auteur]
Lmimouni, Kamal [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dufour, Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
IEEE Transactions on Electron Devices
Pagination :
1997-2003
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2004
ISSN :
0018-9383
Mot(s)-clé(s) en anglais :
Surfaces
Thin film transistors
Semiconductor device modeling
Charge carrier mobility
Thin film transistors
Semiconductor device modeling
Charge carrier mobility
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
We have fabricated pentacene-based thin film transistors and analyzed their electrical properties with the help of two-dimensional drift-diffusion simulations which favorably compare with the experimental results. We have ...
Lire la suite >We have fabricated pentacene-based thin film transistors and analyzed their electrical properties with the help of two-dimensional drift-diffusion simulations which favorably compare with the experimental results. We have set up a model considering the polycrystalline nature of pentacene and the presence of grains and grain boundaries. We show how this model can be applied to different devices with different grain sizes and we analyze the relationship between mobility, grain size and applied gate voltage. On the basis of the simulation results, we can introduce an effective carrier mobility, which accounts for grain-related effects. The comparison between experimental results and simulations allows us to clearly understand the differences in the mobility derived by the analysis of current-voltage curve (as done experimentally by using standard MOSFET theory) and the intrinsic mobility of the organic layer. The effect of the pentacene/oxide interface traps and fixed surface charges has also been considered. The dependence of the threshold voltage on the density and energy level of the trap states has been outlined.Lire moins >
Lire la suite >We have fabricated pentacene-based thin film transistors and analyzed their electrical properties with the help of two-dimensional drift-diffusion simulations which favorably compare with the experimental results. We have set up a model considering the polycrystalline nature of pentacene and the presence of grains and grain boundaries. We show how this model can be applied to different devices with different grain sizes and we analyze the relationship between mobility, grain size and applied gate voltage. On the basis of the simulation results, we can introduce an effective carrier mobility, which accounts for grain-related effects. The comparison between experimental results and simulations allows us to clearly understand the differences in the mobility derived by the analysis of current-voltage curve (as done experimentally by using standard MOSFET theory) and the intrinsic mobility of the organic layer. The effect of the pentacene/oxide interface traps and fixed surface charges has also been considered. The dependence of the threshold voltage on the density and energy level of the trap states has been outlined.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :