TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate

Łaszcz, A.; Katcki, J.; Ratajczak, J.; Tang, Xing; Dubois, Emmanuel

Type de document :

Article dans une revue scientifique: Article original

DOI :

10.1111/j.1365-2818.2006.01653.x

Titre :

TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate

Auteur(s) :

Łaszcz, A. [Auteur]
Katcki, J. [Auteur]
Ratajczak, J. [Auteur]
Tang, Xing [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Dubois, Emmanuel [Auteur]

Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]

Titre de la revue :

Journal of Microscopy

Pagination :

38-41

Éditeur :

Wiley

Date de publication :

2006

ISSN :

0022-2720

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Matériaux

Résumé en anglais : [en]

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the ...
Lire la suite >Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (450°C, 525°C and 600°C) on the formation of an erbium silicide layer in the Pt/Er/Si/SiO<sub>2</sub>/Si structure was analysed by means of cross-sectional transmission electron microscopy. The Si grains/interlayer formed at the interface and the presence of Si grains within the Er-related layer constitute proof that Si reacts with Er in the presence of a Pt top layer in the temperature range 450–600 °C. The process of silicide formation in the Pt/Er/Si structure differs from that in the Er/Si structure. At 600 °C, the Pt top layer vanishes and a (Pt–Er)Si<sub>x</sub> system is formed.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Non spécifiée

Vulgarisation :

Non

Projet Européen :

SODAMOS

Collections :