Theory of the radiative and non radiative ...
Document type :
Partie d'ouvrage
Title :
Theory of the radiative and non radiative processes in silicon nanocrystallites
Author(s) :
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lannoo, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lannoo, Michel [Auteur]
Scientific editor(s) :
WILLARDSON R.K.
WEBER E.
LOCKWOOD D.
WEBER E.
LOCKWOOD D.
Book title :
Light emissions in silicon : from physics to devices
Publisher :
Academic Press, London, UK
Publication date :
1997-11
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
This chapter describes the theory of radiative and nonradiative processes in Silicon (Si) nanocrystallites. Near threshold optical transitions in an indirect bandgap material like silicon have very small oscillator strength ...
Show more >This chapter describes the theory of radiative and nonradiative processes in Silicon (Si) nanocrystallites. Near threshold optical transitions in an indirect bandgap material like silicon have very small oscillator strength preventing its use in optoelectronics. An interesting field of research is thus to devise Si-based materials where this selection rule is broken, leading to efficient luminescence. A major step in this direction has been the observation of intense photoluminescence (PL) from porous silicon (π-Si). This has stimulated considerable theoretical activity on the optical properties of Si nanocrystallites and quantum wires. Quantum confinement is characterized by several consequences—(i) the fundamental gap exhibits a blue shift, (ii) in nanocrystallites the filled and the empty states become quantized, and (iii) optical dipole transitions across the fundamental gap become allowed. All three effects increase with decreasing size of the crystallites. Although π-Si is a very heterogeneous material on a microscopic scale, some fine structures clearly appear in the excitation spectrum of the visible luminescence at 2 K of some π-Si samples.Show less >
Show more >This chapter describes the theory of radiative and nonradiative processes in Silicon (Si) nanocrystallites. Near threshold optical transitions in an indirect bandgap material like silicon have very small oscillator strength preventing its use in optoelectronics. An interesting field of research is thus to devise Si-based materials where this selection rule is broken, leading to efficient luminescence. A major step in this direction has been the observation of intense photoluminescence (PL) from porous silicon (π-Si). This has stimulated considerable theoretical activity on the optical properties of Si nanocrystallites and quantum wires. Quantum confinement is characterized by several consequences—(i) the fundamental gap exhibits a blue shift, (ii) in nanocrystallites the filled and the empty states become quantized, and (iii) optical dipole transitions across the fundamental gap become allowed. All three effects increase with decreasing size of the crystallites. Although π-Si is a very heterogeneous material on a microscopic scale, some fine structures clearly appear in the excitation spectrum of the visible luminescence at 2 K of some π-Si samples.Show less >
Language :
Anglais
Audience :
Non spécifiée
Popular science :
Non
Comment :
Semiconductors and Semimetals series, Volume 49, ISBN: 978-0-12-752157-2 - ISBN10: 0-12-752157-7
Source :