Theory of Si nanocrystals
Document type :
Partie d'ouvrage
Title :
Theory of Si nanocrystals
Author(s) :
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lannoo, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lannoo, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Scientific editor(s) :
PAVESI L.
GAPONENKO S.
and DAL NEGRO L.
GAPONENKO S.
and DAL NEGRO L.
Book title :
Towards the first silicon laser
Publisher :
Kluwer Academic Publishers
Publication date :
2003
ISBN :
978-1-4020-1194-8
English keyword(s) :
Porous Silicon
Local Density Approximation
Silicon Nanocrystals
Intraband Transition
Radiative Recombination Rate
Local Density Approximation
Silicon Nanocrystals
Intraband Transition
Radiative Recombination Rate
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The intense luminescence observed for porous silicon [1] has raised extremely interesting problems related to the possibility of using silicon in optoelectronics. One likely explanation is quantum confinement, induced by ...
Show more >The intense luminescence observed for porous silicon [1] has raised extremely interesting problems related to the possibility of using silicon in optoelectronics. One likely explanation is quantum confinement, induced by the formation of nanocrystallites. However, the experimental data reveal a complex situation characteristic of several radiative as well as non radiative channels. Our main aim in this chapter will thus be to review the relevant theoretical information concerning the optical properties of Si nanocrystals in order to identify these channels.Show less >
Show more >The intense luminescence observed for porous silicon [1] has raised extremely interesting problems related to the possibility of using silicon in optoelectronics. One likely explanation is quantum confinement, induced by the formation of nanocrystallites. However, the experimental data reveal a complex situation characteristic of several radiative as well as non radiative channels. Our main aim in this chapter will thus be to review the relevant theoretical information concerning the optical properties of Si nanocrystals in order to identify these channels.Show less >
Language :
Anglais
Audience :
Non spécifiée
Popular science :
Non
Comment :
NATO Science Series, II : Mathematics, Physics and Chemistry , Vol. 93, ISBN 978-1-4020-1193-1
Source :
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