Package-free infrared micro sensor using ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Package-free infrared micro sensor using polysilicon thermopile
Author(s) :
Boutchich, Mohamed [Auteur]
University of Cambridge [UK] [CAM]
Ziouche, Katir [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ait-Hammouda Yala, M. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Godts, Pascale [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Leclercq, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
University of Cambridge [UK] [CAM]
Ziouche, Katir [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ait-Hammouda Yala, M. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Godts, Pascale [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Leclercq, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Sensors and Actuators A: Physical
Pages :
52-58
Publisher :
Elsevier
Publication date :
2005-05-31
ISSN :
0924-4247
English keyword(s) :
Packaging
Polysilicon
Thermopile
Membranes
IR micro sensor
NETD
Polysilicon
Thermopile
Membranes
IR micro sensor
NETD
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
In this paper, a new IR thermal micro sensor using an original design and silicon micro technology is presented. The operating principle of the sensor is based on the Seebeck effect. A high thermoelectric power thermopile ...
Show more >In this paper, a new IR thermal micro sensor using an original design and silicon micro technology is presented. The operating principle of the sensor is based on the Seebeck effect. A high thermoelectric power thermopile has been developed using thermoelectric properties of phosphorus and boron doped LPCVD polysilicon. Moreover, low stress membranes have been recessed under each hot and cold junction. The temperature gradient is maintained by increasing the thermal resistance under the thermocouples. A former study allows us to determine the Seebeck coefficients and relative resistance changes of phosphorus and boron LPCVD polysilicon layers within the temperature range of 293–373 K. The sensitivity values reached 72 μV/(W/m2) for 5 mm × 5 mm sensor with low influence to convection. This planar and symmetrical configuration requires no specific packaging, thus minimizing the manufacturing cost compared with existing realizations. The micro sensor is manufactured within the framework of a national project (CNRS-INTERLAB).Show less >
Show more >In this paper, a new IR thermal micro sensor using an original design and silicon micro technology is presented. The operating principle of the sensor is based on the Seebeck effect. A high thermoelectric power thermopile has been developed using thermoelectric properties of phosphorus and boron doped LPCVD polysilicon. Moreover, low stress membranes have been recessed under each hot and cold junction. The temperature gradient is maintained by increasing the thermal resistance under the thermocouples. A former study allows us to determine the Seebeck coefficients and relative resistance changes of phosphorus and boron LPCVD polysilicon layers within the temperature range of 293–373 K. The sensitivity values reached 72 μV/(W/m2) for 5 mm × 5 mm sensor with low influence to convection. This planar and symmetrical configuration requires no specific packaging, thus minimizing the manufacturing cost compared with existing realizations. The micro sensor is manufactured within the framework of a national project (CNRS-INTERLAB).Show less >
Language :
Anglais
Popular science :
Non
Source :
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