130-nm partially depleted SOI MOSFET ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
130-nm partially depleted SOI MOSFET nonlinear model including the kink effect for linearity properties investigation
Auteur(s) :
Siligaris, A. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dambrine, Gilles [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Schreurs, D. [Auteur]
Danneville, François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dambrine, Gilles [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Schreurs, D. [Auteur]
Danneville, François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
IEEE Transactions on Electron Devices
Pagination :
2809-2812
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2005-12-05
ISSN :
0018-9383
Mot(s)-clé(s) en anglais :
MOSFETs
Silicon on insulator technology
Semiconductor device modeling
Equivalent circuits
Silicon on insulator technology
Semiconductor device modeling
Equivalent circuits
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
In this brief, a nonlinear empirical model is proposed for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs. It is based on an equivalent circuit approach in which the nonlinear elements are described by empirical ...
Lire la suite >In this brief, a nonlinear empirical model is proposed for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs. It is based on an equivalent circuit approach in which the nonlinear elements are described by empirical equations. A new original method is proposed for modeling the kink effect and its frequency dispersion, occurring in floating body PD SOI MOSFETs. The model is validated through large-signal measurements, and the nonlinear properties of PD SOI transistors are studied.Lire moins >
Lire la suite >In this brief, a nonlinear empirical model is proposed for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs. It is based on an equivalent circuit approach in which the nonlinear elements are described by empirical equations. A new original method is proposed for modeling the kink effect and its frequency dispersion, occurring in floating body PD SOI MOSFETs. The model is validated through large-signal measurements, and the nonlinear properties of PD SOI transistors are studied.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :