Multiexponential photoluminescence decay ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Multiexponential photoluminescence decay in indirect-gap semiconductor nanocrystals
Auteur(s) :
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Reynaud, Cécile [Auteur]
Laboratoire Francis PERRIN [LFP - URA 2453]
Guillois, Olivier [Auteur]
Laboratoire Francis PERRIN [LFP - URA 2453]
Ledoux, Gilles [Auteur]
Huisken, Friedrich [Auteur]
Laboratoire Francis PERRIN [LFP - URA 2453]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Reynaud, Cécile [Auteur]
Laboratoire Francis PERRIN [LFP - URA 2453]
Guillois, Olivier [Auteur]
Laboratoire Francis PERRIN [LFP - URA 2453]
Ledoux, Gilles [Auteur]
Huisken, Friedrich [Auteur]
Laboratoire Francis PERRIN [LFP - URA 2453]
Titre de la revue :
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Pagination :
235318 1-4
Éditeur :
American Physical Society
Date de publication :
2006
ISSN :
1098-0121
Mot(s)-clé(s) en anglais :
silicon
elemental semiconductors
photoluminescence
nanostructured materials
semiconductor quantum dots
time resolved spectra
energy gap
tight-binding calculations
elemental semiconductors
photoluminescence
nanostructured materials
semiconductor quantum dots
time resolved spectra
energy gap
tight-binding calculations
Discipline(s) HAL :
Chimie/Chimie théorique et/ou physique
Résumé en anglais : [en]
The origin of the multiexponential photoluminescence (PL) decay of Si quantum dots (QDs) has been debated for a long time. We present studies combining time-resolved PL experiments and tight binding calculations of ...
Lire la suite >The origin of the multiexponential photoluminescence (PL) decay of Si quantum dots (QDs) has been debated for a long time. We present studies combining time-resolved PL experiments and tight binding calculations of phonon-assisted optical transitions showing that the distribution of lifetimes and its wavelength dependence are quantitatively predictable and can be interpreted as intrinsic properties of the QDs due to the indirect nature of the Si bandgap. This result can be generalized to QD ensembles of any indirect gap semiconductor.Lire moins >
Lire la suite >The origin of the multiexponential photoluminescence (PL) decay of Si quantum dots (QDs) has been debated for a long time. We present studies combining time-resolved PL experiments and tight binding calculations of phonon-assisted optical transitions showing that the distribution of lifetimes and its wavelength dependence are quantitatively predictable and can be interpreted as intrinsic properties of the QDs due to the indirect nature of the Si bandgap. This result can be generalized to QD ensembles of any indirect gap semiconductor.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :