Influence of the operating temperature on ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Influence of the operating temperature on the design and utilization of 94 GHz pulsed silicon IMPATT diodes
Author(s) :
Dalle, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Beaussart, Stéphane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Friscourt, Marie-Renée [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Beaussart, Stéphane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Friscourt, Marie-Renée [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
IEEE Electron Device Letters
Pages :
262-264
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
1998
ISSN :
0741-3106
English keyword(s) :
Silicon
Semiconductor diodes
RLC circuits
Radio frequency
Oscillators
Temperature distribution
Q factor
Doping profiles
Impact ionization
Semiconductor devices
Semiconductor diodes
RLC circuits
Radio frequency
Oscillators
Temperature distribution
Q factor
Doping profiles
Impact ionization
Semiconductor devices
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat doping profile silicon impact ionization avalanche transit time (IMPATT) diodes for high-power pulsed operation is investigated by means of time ...
Show more >The RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat doping profile silicon impact ionization avalanche transit time (IMPATT) diodes for high-power pulsed operation is investigated by means of time domain electrical oscillator models. It is demonstrated that these diodes have a limited optimum temperature range of operation, associated to specific matching and bias conditions, to achieve a stable and high power operation. This restriction necessitates a thermal control when the oscillator must operate over a wide ambient temperature range. Highly doped, short active zone length diodes appear to have the best potential for high power performance.Show less >
Show more >The RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat doping profile silicon impact ionization avalanche transit time (IMPATT) diodes for high-power pulsed operation is investigated by means of time domain electrical oscillator models. It is demonstrated that these diodes have a limited optimum temperature range of operation, associated to specific matching and bias conditions, to achieve a stable and high power operation. This restriction necessitates a thermal control when the oscillator must operate over a wide ambient temperature range. Highly doped, short active zone length diodes appear to have the best potential for high power performance.Show less >
Language :
Anglais
Popular science :
Non
Source :