Dispersive charge transport along the ...
Type de document :
Pré-publication ou Document de travail
Titre :
Dispersive charge transport along the surface of an insulating layer observed by Electrostatic Force Microscopy
Auteur(s) :
Lambert, J. [Auteur]
Groupe de Physique des Solides [GPS]
de Loubens, G. [Auteur]
Groupe de Physique des Solides [GPS]
Guthmann, C. [Auteur]
Groupe de Physique des Solides [GPS]
Saint-Jean, M. [Auteur]
Groupe de Physique des Solides [GPS]
Melin, Thierry [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Groupe de Physique des Solides [GPS]
de Loubens, G. [Auteur]
Groupe de Physique des Solides [GPS]
Guthmann, C. [Auteur]
Groupe de Physique des Solides [GPS]
Saint-Jean, M. [Auteur]
Groupe de Physique des Solides [GPS]
Melin, Thierry [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Discipline(s) HAL :
Physique [physics]/Matière Condensée [cond-mat]/Autre [cond-mat.other]
Résumé en anglais : [en]
We report the observation in the direct space of the transport of a few thousand charges submitted to atunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observedusing the ...
Lire la suite >We report the observation in the direct space of the transport of a few thousand charges submitted to atunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observedusing the same Electrostatic Force Microscope. During the time range accessible to our measurements (i.e.$t=1\sim1000\un{s}$), the transport of electrons is mediated by traps in the oxide. We measure the mobilityof electrons in the "surface" states of the silicon oxide layer and show the dispersive nature of their motion. It is also demonstrated that the saturation of deep oxide traps strongly enhance the transport of electrons under lateral electric field.Lire moins >
Lire la suite >We report the observation in the direct space of the transport of a few thousand charges submitted to atunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observedusing the same Electrostatic Force Microscope. During the time range accessible to our measurements (i.e.$t=1\sim1000\un{s}$), the transport of electrons is mediated by traps in the oxide. We measure the mobilityof electrons in the "surface" states of the silicon oxide layer and show the dispersive nature of their motion. It is also demonstrated that the saturation of deep oxide traps strongly enhance the transport of electrons under lateral electric field.Lire moins >
Langue :
Anglais
Commentaire :
submitted to EPL
Source :
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- https://hal.archives-ouvertes.fr/hal-00000962/document
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- http://arxiv.org/pdf/cond-mat/0312471
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- https://hal.archives-ouvertes.fr/hal-00000962/document
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- https://hal.archives-ouvertes.fr/hal-00000962/document
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- master.pdf
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- 0312471
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- document
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