Composition control of lead‐free piezoelectric ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Composition control of lead‐free piezoelectric BNT thin ceramic films deposited by ex situ sputtering
Author(s) :
Hamieh, Ahmad [Auteur correspondant]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ponchel, Freddy [Auteur]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Remiens, Denis [Auteur]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ponchel, Freddy [Auteur]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Remiens, Denis [Auteur]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Journal of the American Ceramic Society
Pages :
4381-4388
Publisher :
Wiley
Publication date :
2021-09
ISSN :
0002-7820
HAL domain(s) :
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Acoustique [physics.class-ph]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Acoustique [physics.class-ph]
English abstract : [en]
(Bi0.5Na0.5)TiO3 thin film growth by ex situ sputtering has been investigated and reported in this paper. An original approach, based on the growth process, was used in order to precisely control the film composition, which ...
Show more >(Bi0.5Na0.5)TiO3 thin film growth by ex situ sputtering has been investigated and reported in this paper. An original approach, based on the growth process, was used in order to precisely control the film composition, which has never been reported in BNT growth. The bismuth content in the films and so the composition of amorphous sputtered films was controlled by a slight heating of the substrate during the growth (150?240°C). Then, films were crystallized, obviously without any change in composition, by a post-annealing treatment. More precisely, without substrate heating and using a stoichiometric target, the film presents an excess of Bi but when it is deposited at 200°C the film becomes stoichiometric. It was shown that the sticking coefficient of Bi is particularly sensitive even at low substrate temperatures, whereas Na and Ti sticking coefficients are not impacted. Followed by a post-annealing in air at 650°C, the composition of the amorphous BNT films deposited at 200°C remains stoichiometric and the film exhibits a high (100) preferred orientation in a pure perovskite phase and a dense microstructure. The evaluation of the electrical properties as a function of the Bi content in the film, adjusted by the deposition temperature, shows a strong impact on the ferroelectric properties where the best performances were obtained with the stoichiometric BNT film deposited at 200°C.Show less >
Show more >(Bi0.5Na0.5)TiO3 thin film growth by ex situ sputtering has been investigated and reported in this paper. An original approach, based on the growth process, was used in order to precisely control the film composition, which has never been reported in BNT growth. The bismuth content in the films and so the composition of amorphous sputtered films was controlled by a slight heating of the substrate during the growth (150?240°C). Then, films were crystallized, obviously without any change in composition, by a post-annealing treatment. More precisely, without substrate heating and using a stoichiometric target, the film presents an excess of Bi but when it is deposited at 200°C the film becomes stoichiometric. It was shown that the sticking coefficient of Bi is particularly sensitive even at low substrate temperatures, whereas Na and Ti sticking coefficients are not impacted. Followed by a post-annealing in air at 650°C, the composition of the amorphous BNT films deposited at 200°C remains stoichiometric and the film exhibits a high (100) preferred orientation in a pure perovskite phase and a dense microstructure. The evaluation of the electrical properties as a function of the Bi content in the film, adjusted by the deposition temperature, shows a strong impact on the ferroelectric properties where the best performances were obtained with the stoichiometric BNT film deposited at 200°C.Show less >
Language :
Anglais
Popular science :
Non
ANR Project :
Source :