Fabrication of μLEDS for light fidelity ...
Document type :
Communication dans un congrès avec actes
Title :
Fabrication of μLEDS for light fidelity optical transmission
Author(s) :
Dogheche, Karim [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Optoélectronique - IEMN [OPTO - IEMN]
Alshehri, Bandar [Auteur]
Abdulrahmane, Namarig Taha [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ramdane, Abderrahim [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Optoélectronique - IEMN [OPTO - IEMN]
Alshehri, Bandar [Auteur]
Abdulrahmane, Namarig Taha [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ramdane, Abderrahim [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Optoélectronique - IEMN [OPTO - IEMN]
Conference title :
International black sea coastline countries symposium-VI
City :
Giresun
Country :
Turquie
Start date of the conference :
2021-04-28
Journal title :
Proceedings of the International black sea coastline countries symposium-VI 2021
Publication date :
2021-04
English keyword(s) :
light fidelity
Gallium nitride
photonics
LED
Gallium nitride
photonics
LED
HAL domain(s) :
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Optique / photonique
Sciences de l'ingénieur [physics]/Acoustique [physics.class-ph]
Sciences de l'ingénieur [physics]/Optique / photonique
Sciences de l'ingénieur [physics]/Acoustique [physics.class-ph]
English abstract : [en]
The recent years have announced the emergence of novel photonic technologies based on III-nitrides semiconductors. Gathering the progress in materials maturity and the advance in manufacturing process, ...
Show more >The recent years have announced the emergence of novel photonic technologies based on III-nitrides semiconductors. Gathering the progress in materials maturity and the advance in manufacturing process, Solid-State Lighting based upon GaN-based light-emitting diodes (LEDs) has emerged as one the dominant technology for indoor/outdoor lighting as in hospital and transportation. In addition, the opportunity to apply LED for indoor/outdoor communication is a research innovation for the community. We have developed the proper design and the clean room fabrication of micro sized visible LEDs based on InGaN/GaN multiple quantum wells (MQWs) grown on sapphire substrates. A PIN configuration is selected for the design. Global experiments have been conducted by reducing the LED dimension (from 300 to 5μm) to lower the capacitance, the internal electric field of InGaN MQWs and therefore to increase the LED’s emission efficiency. Optical and electrical characterizations of the fabricated samples have performed to extract the cut-off frequency. Measurements are performed under reverse bias both in the dark and under illumination by a laser source. Experimental results have demonstrated that a frequency bandwidth of respectively 300MHz and 1.5GHz could be attain for a 100μm and 25μm size structures.Show less >
Show more >The recent years have announced the emergence of novel photonic technologies based on III-nitrides semiconductors. Gathering the progress in materials maturity and the advance in manufacturing process, Solid-State Lighting based upon GaN-based light-emitting diodes (LEDs) has emerged as one the dominant technology for indoor/outdoor lighting as in hospital and transportation. In addition, the opportunity to apply LED for indoor/outdoor communication is a research innovation for the community. We have developed the proper design and the clean room fabrication of micro sized visible LEDs based on InGaN/GaN multiple quantum wells (MQWs) grown on sapphire substrates. A PIN configuration is selected for the design. Global experiments have been conducted by reducing the LED dimension (from 300 to 5μm) to lower the capacitance, the internal electric field of InGaN MQWs and therefore to increase the LED’s emission efficiency. Optical and electrical characterizations of the fabricated samples have performed to extract the cut-off frequency. Measurements are performed under reverse bias both in the dark and under illumination by a laser source. Experimental results have demonstrated that a frequency bandwidth of respectively 300MHz and 1.5GHz could be attain for a 100μm and 25μm size structures.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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