Experimental observation and modeling of ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
Author(s) :
Pacheco-Sanchez, Anibal [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Mavredakis, Nikolaos [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Feijoo, Pedro C. [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Wei, Wei [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pallecchi, Emiliano [Auteur]
Carbon - IEMN [CARBON - IEMN]
Happy, Henri [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Jimenez, David [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Mavredakis, Nikolaos [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Feijoo, Pedro C. [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Wei, Wei [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pallecchi, Emiliano [Auteur]
Carbon - IEMN [CARBON - IEMN]
Happy, Henri [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Jimenez, David [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Journal title :
IEEE Transactions on Electron Devices
Pages :
5790-5796
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2020
ISSN :
0018-9383
English keyword(s) :
Logic gates
Graphene
Hysteresis
Performance evaluation
Transistors
Pulse measurements
Voltage measurement
Analytical model
channel potential
graphene field-effect transistor (GFET)
high-frequency (HF) performance
hysteresis
opposing pulses
traps
Graphene
Hysteresis
Performance evaluation
Transistors
Pulse measurements
Voltage measurement
Analytical model
channel potential
graphene field-effect transistor (GFET)
high-frequency (HF) performance
hysteresis
opposing pulses
traps
HAL domain(s) :
Sciences de l'ingénieur [physics]/Electronique
English abstract : [en]
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is ...
Show more >The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and suitable approach to obtain reproducible device characteristics. Trap-affected and trap-reduced experimental data enable a discussion regarding the impact of traps on static and dynamic device performance. An analytical drain current model calibrated with the experimental data enables the study of the trap effects on the channel potential within the device. High-frequency (HF) figures of merit and the intrinsic gain of the device obtained from both experimental and synthetic data with and without hysteresis show the importance of considering the generally overlooked impact of traps for analog and HF applications.Show less >
Show more >The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and suitable approach to obtain reproducible device characteristics. Trap-affected and trap-reduced experimental data enable a discussion regarding the impact of traps on static and dynamic device performance. An analytical drain current model calibrated with the experimental data enables the study of the trap effects on the channel potential within the device. High-frequency (HF) figures of merit and the intrinsic gain of the device obtained from both experimental and synthetic data with and without hysteresis show the importance of considering the generally overlooked impact of traps for analog and HF applications.Show less >
Language :
Anglais
Popular science :
Non
European Project :
Source :
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