Mechanisms of a rectifying TiN gate contact ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Mechanisms of a rectifying TiN gate contact for AlGaN/GaN HEMTs on silicon substrate
Auteur(s) :
Chahdi, Hassane Ouazzani [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Benbakhti, Brahim [Auteur correspondant]
Mattalah, Maghnia [Auteur]
Gerbedoen, Jean Claude [Auteur]
Jaouad, Abdelatif [Auteur]
BOURZGUI, Nour-Eddine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Benbakhti, Brahim [Auteur correspondant]
Mattalah, Maghnia [Auteur]
Gerbedoen, Jean Claude [Auteur]
Jaouad, Abdelatif [Auteur]
BOURZGUI, Nour-Eddine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Titre de la revue :
IEEE Transactions on Nanotechnology
Pagination :
682-688
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2020
ISSN :
1536-125X
Mot(s)-clé(s) en anglais :
Titanium nitride
rectifying gate contact
pseudo-p/n junction
AlGaN/GaN HEMTs
X-ray photoelectron spectroscopy
transmission electron microscopy
rectifying gate contact
pseudo-p/n junction
AlGaN/GaN HEMTs
X-ray photoelectron spectroscopy
transmission electron microscopy
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
Rectifying Titanium Nitride (TiN) gate contact technology is developed for AlGaN/GaN based micro and nanometer HEMTs. A high compressive strain occurring in thinner TiN films (ranging from 5 nm to 60 nm), deposited by ...
Lire la suite >Rectifying Titanium Nitride (TiN) gate contact technology is developed for AlGaN/GaN based micro and nanometer HEMTs. A high compressive strain occurring in thinner TiN films (ranging from 5 nm to 60 nm), deposited by sputtering, leads to a reduction in tensile strain at the surface of AlGaN barrier. The diminution in tensile strain forms a pseudo-p-type layer (diode-like). This strain reduction has no effect on the bandgap of the AlGaN barrier layer, allowing the gate to withstand a reverse gate bias larger than 100 V. Characterization using the high-resolution transmission electron microscopy combined with the X-ray photoelectron spectroscopy reveals a good TiN/AlGaN interface quality and no diffusion of TiN into AlGaN. The effective energy barrier of the rectifying nanoscale TiN gate contact has a relatively large height of 1.1 eV associated with an ideality factor of 1.4. A dramatic drop of the reverse-bias leakage current down to 11 pA/mm is measured at -30 V. In addition, electrical measurements show very low gate and drain lag effects of 4.2% and 6.7%, respectively.Lire moins >
Lire la suite >Rectifying Titanium Nitride (TiN) gate contact technology is developed for AlGaN/GaN based micro and nanometer HEMTs. A high compressive strain occurring in thinner TiN films (ranging from 5 nm to 60 nm), deposited by sputtering, leads to a reduction in tensile strain at the surface of AlGaN barrier. The diminution in tensile strain forms a pseudo-p-type layer (diode-like). This strain reduction has no effect on the bandgap of the AlGaN barrier layer, allowing the gate to withstand a reverse gate bias larger than 100 V. Characterization using the high-resolution transmission electron microscopy combined with the X-ray photoelectron spectroscopy reveals a good TiN/AlGaN interface quality and no diffusion of TiN into AlGaN. The effective energy barrier of the rectifying nanoscale TiN gate contact has a relatively large height of 1.1 eV associated with an ideality factor of 1.4. A dramatic drop of the reverse-bias leakage current down to 11 pA/mm is measured at -30 V. In addition, electrical measurements show very low gate and drain lag effects of 4.2% and 6.7%, respectively.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Projet ANR :
Source :