Thermal response and correlation between ...

Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
10.1016/j.mee.2019.111148
Title :
Thermal response and correlation between mobility and kink effect in GaN HEMTs
Author(s) :
Alim, Mohammad A. [Auteur correspondant]
Afrin, S. [Auteur]
Rezazadeh, A. A. [Auteur]
Gaquiere, Christophe [Auteur] refId
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
MICROELECTRONIC ENGINEERING
Pages :
111148, 5 pages
Publisher :
Elsevier
Publication date :
2020-01-15
ISSN :
0167-9317
English keyword(s) :
AlGaN/GaN FET
Mobility
Kink effect
Traps
Thermal behaviour
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
This work notices the relation among the kink effect and the mobility in AlGaN/GaN HEMT and its response to temperature. The kink phenomenon found in transistor behaviour are carefully characterized at persuade point which ...
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Language :
Anglais
Popular science :
Non
Collections :
Source :
Harvested from HAL