Fatigue test on flexible graphene field ...
Document type :
Communication dans un congrès avec actes
Title :
Fatigue test on flexible graphene field effect transistors with bottom gate electrode
Author(s) :
Wei, Wei [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Fadil, Dalal [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mhedhbi, Sarra [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Salk, Soukaina [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pallecchi, Emiliano [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Happy, Henri [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Fadil, Dalal [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mhedhbi, Sarra [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Salk, Soukaina [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pallecchi, Emiliano [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Happy, Henri [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
IEEE MTT-S International Microwave Symposium, IMS 2018
City :
Philadelphia, PA
Country :
Etats-Unis d'Amérique
Start date of the conference :
2018-06-10
Book title :
2018 IEEE/MTT-S International Microwave Symposium - IMS
Publisher :
IEEE
Publication date :
2018
English keyword(s) :
Logic gates
Fatigue
Graphene
Radio frequency
Transistors
Performance evaluation
Substrates
Fatigue
Graphene
Radio frequency
Transistors
Performance evaluation
Substrates
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
Graphene is a promising candidate as channel material for flexible wearable radio frequency devices. In this work we fabricated double gate flexible graphene field effect transistors and characterized their DC and RF ...
Show more >Graphene is a promising candidate as channel material for flexible wearable radio frequency devices. In this work we fabricated double gate flexible graphene field effect transistors and characterized their DC and RF performance. Moreover, we performed a fatigue test consisting on a 1000 times dynamical bending at 1 Hz. The banding radius was 40 mm, which correspond to a strain of 0.16%. The DC and RF characterization shows the device performance variation is around 10%. The finding demonstrates the robustness of our GFETs, further work will be needed to determine the physical mechanism that cause the performance change.Show less >
Show more >Graphene is a promising candidate as channel material for flexible wearable radio frequency devices. In this work we fabricated double gate flexible graphene field effect transistors and characterized their DC and RF performance. Moreover, we performed a fatigue test consisting on a 1000 times dynamical bending at 1 Hz. The banding radius was 40 mm, which correspond to a strain of 0.16%. The DC and RF characterization shows the device performance variation is around 10%. The finding demonstrates the robustness of our GFETs, further work will be needed to determine the physical mechanism that cause the performance change.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :