Non-volatile RF and mm-wave switches based ...
Type de document :
Communication dans un congrès avec actes
Titre :
Non-volatile RF and mm-wave switches based on monolayer hBN
Auteur(s) :
Kim, Myungsoo [Auteur]
Pallecchi, Emiliano [Auteur]
Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ge, Ruijing [Auteur]
Wu, Xiaohan [Auteur]
Avramovic, Vanessa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lee, Jack [Auteur]
Imaging Sciences and Biomedical Engineering Division [London]
Happy, Henri [Auteur]
Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Akinwande, Deji [Auteur]
Pallecchi, Emiliano [Auteur]
Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ge, Ruijing [Auteur]
Wu, Xiaohan [Auteur]
Avramovic, Vanessa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lee, Jack [Auteur]
Imaging Sciences and Biomedical Engineering Division [London]
Happy, Henri [Auteur]
Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Akinwande, Deji [Auteur]
Titre de la manifestation scientifique :
IEEE International Electron Devices Meeting, IEDM 2019, Session 9 - Microwave, Millimeter Wave and Analog Technology - Compound Semiconductors and Novel Materials for RF and mmWave
Ville :
San Francisco
Pays :
Etats-Unis d'Amérique
Date de début de la manifestation scientifique :
2019-12-07
Titre de la revue :
Proceedings of 65th International Electron Devices Meeting, IEDM 2019
Éditeur :
IEEE
Date de publication :
2019
Mot(s)-clé(s) en anglais :
boron compounds
low-power electronics
microwave switches
millimetre wave integrated circuits
molybdenum
molybdenum compounds
random-access storage
low-power electronics
microwave switches
millimetre wave integrated circuits
molybdenum
molybdenum compounds
random-access storage
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
Non-volatile radio-frequency (RF) switches based on hexagonal boron nitride (hBN) are realized for the first time with low insertion loss (≤ 0.2 dB) and high isolation (≥ 15 dB) up to 110 GHz. Crystalline hBN enables the ...
Lire la suite >Non-volatile radio-frequency (RF) switches based on hexagonal boron nitride (hBN) are realized for the first time with low insertion loss (≤ 0.2 dB) and high isolation (≥ 15 dB) up to 110 GHz. Crystalline hBN enables the thinnest RF switch device with a single monolayer (~0.33 nm) as the memory layer owing to its robust layered structure. It affords ~20 dBm power handling, 10 dB higher compared to MoS 2 switches due to its wider bandgap (~6 eV). Importantly, operating frequencies cover the RF, 5G, and mm-wave bands, making this a promising low-power switch for diverse communication and connectivity front-end systems. Compared to other switch technologies based on MEMS, memristor, and phase-change memory (PCM), hBN switches offer a promising combination of non-volatility, nanosecond switching, power handling, high figure-of-merit cutoff frequency (43 THz), and heater-less ambient integration. Our pioneering work suggests that atomically-thin nanomaterials can be good device candidates for 5G and beyond.Lire moins >
Lire la suite >Non-volatile radio-frequency (RF) switches based on hexagonal boron nitride (hBN) are realized for the first time with low insertion loss (≤ 0.2 dB) and high isolation (≥ 15 dB) up to 110 GHz. Crystalline hBN enables the thinnest RF switch device with a single monolayer (~0.33 nm) as the memory layer owing to its robust layered structure. It affords ~20 dBm power handling, 10 dB higher compared to MoS 2 switches due to its wider bandgap (~6 eV). Importantly, operating frequencies cover the RF, 5G, and mm-wave bands, making this a promising low-power switch for diverse communication and connectivity front-end systems. Compared to other switch technologies based on MEMS, memristor, and phase-change memory (PCM), hBN switches offer a promising combination of non-volatility, nanosecond switching, power handling, high figure-of-merit cutoff frequency (43 THz), and heater-less ambient integration. Our pioneering work suggests that atomically-thin nanomaterials can be good device candidates for 5G and beyond.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :