Small-signal model for 2D-material based ...
Type de document :
Article dans une revue scientifique
DOI :
Titre :
Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering nonreciprocal capacitances
Auteur(s) :
Pasadas, Francisco [Auteur]
Wei, Wei [Auteur]
Pallecchi, Emiliano [Auteur]
Happy, Henri [Auteur]
Jimenez, David [Auteur]
Wei, Wei [Auteur]
Pallecchi, Emiliano [Auteur]
Happy, Henri [Auteur]
Jimenez, David [Auteur]
Titre de la revue :
IEEE Transactions on Electron Devices
Pagination :
4715-4723
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2017-11
ISSN :
0018-9383
Mot(s)-clé(s) en anglais :
2d materials
charge conservation
fet
monolithic microwave integrated circuit (mmic)
radio-frequency (rf) figures of merit (foms)
s-parameters
small-signal
charge conservation
fet
monolithic microwave integrated circuit (mmic)
radio-frequency (rf) figures of merit (foms)
s-parameters
small-signal
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
A small-signal equivalent circuit of 2D-material based FETs is presented. Charge conservation and nonreciprocal capacitances have been assumed, so the model can be used to make reliable predictions at both device and circuit ...
Lire la suite >A small-signal equivalent circuit of 2D-material based FETs is presented. Charge conservation and nonreciprocal capacitances have been assumed, so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a direct parameter extraction methodology is provided based on S-parameter measurements. In addition to the intrinsic capacitances, transconductance and output conductance, our approach allows extracting the series combination of drain-source metal contact and access resistances. Accounting for these extrinsic resistances is of upmost importance when dealing with low dimensional FETs.Lire moins >
Lire la suite >A small-signal equivalent circuit of 2D-material based FETs is presented. Charge conservation and nonreciprocal capacitances have been assumed, so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a direct parameter extraction methodology is provided based on S-parameter measurements. In addition to the intrinsic capacitances, transconductance and output conductance, our approach allows extracting the series combination of drain-source metal contact and access resistances. Accounting for these extrinsic resistances is of upmost importance when dealing with low dimensional FETs.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :
Fichiers
- http://arxiv.org/pdf/1704.00181
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- https://hal.archives-ouvertes.fr/hal-03335176/document
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