A Highly Porous and Conductive Composite ...
Document type :
Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes
Title :
A Highly Porous and Conductive Composite Gate Electrode for NO, NO2, O2, H2 and NH3 Exhaust Gas Sensors
Author(s) :
Chahdi, Hassane Ouazzani [Auteur]
Université de Lille
Université de Sherbrooke [UdeS]
Helli, Omar [Auteur]
Georgia Tech Lorraine [Metz]
Université de Sherbrooke [UdeS]
Bourzgui, Nour-Eddine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Breuil, Leo [Auteur]
Université de Sherbrooke [UdeS]
Danovich, David [Auteur]
Université de Sherbrooke [UdeS]
Voss, Paul L [Auteur]
Georgia Tech Lorraine [Metz]
Suresh, Sundaram [Auteur]
Georgia Tech Lorraine [Metz]
Aubry, Vincent [Auteur]
Halfaya, Yacine [Auteur]
Georgia Tech Lorraine [Metz]
Ougazzaden, Abdallah [Auteur]
Georgia Tech Lorraine [Metz]
Salvestrini, Jean-Paul [Auteur]
Georgia Tech Lorraine [Metz]
Hassan, Maher, [Auteur]
Université de Sherbrooke [UdeS]
Soltani, Ali [Auteur]
Université de Lille
Université de Sherbrooke [UdeS]
Université de Lille
Université de Sherbrooke [UdeS]
Helli, Omar [Auteur]
Georgia Tech Lorraine [Metz]
Université de Sherbrooke [UdeS]
Bourzgui, Nour-Eddine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Breuil, Leo [Auteur]
Université de Sherbrooke [UdeS]
Danovich, David [Auteur]
Université de Sherbrooke [UdeS]
Voss, Paul L [Auteur]
Georgia Tech Lorraine [Metz]
Suresh, Sundaram [Auteur]
Georgia Tech Lorraine [Metz]
Aubry, Vincent [Auteur]
Halfaya, Yacine [Auteur]
Georgia Tech Lorraine [Metz]
Ougazzaden, Abdallah [Auteur]
Georgia Tech Lorraine [Metz]
Salvestrini, Jean-Paul [Auteur]
Georgia Tech Lorraine [Metz]
Hassan, Maher, [Auteur]
Université de Sherbrooke [UdeS]
Soltani, Ali [Auteur]
Université de Lille
Université de Sherbrooke [UdeS]
Conference title :
18th International Meeting on Chemical Sensors, IMCS 2020
City :
Montreal
Country :
Canada
Start date of the conference :
2020-05-10
Publication date :
2020-05-01
English keyword(s) :
HEMT
Sensors
GaN
H2
O2
NO2
NO
NH3 high temperature
highly porous gate
Sensors
GaN
H2
O2
NO2
NO
NH3 high temperature
highly porous gate
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The real-time knowledge of the NO, NO2 and NH3 concentration at high temperature, would allow manufacturers of automobiles to meet the upcoming stringent EURO7 anti-pollution measures for diesel engines. Knowledge of the ...
Show more >The real-time knowledge of the NO, NO2 and NH3 concentration at high temperature, would allow manufacturers of automobiles to meet the upcoming stringent EURO7 anti-pollution measures for diesel engines. Knowledge of the concentration of each of these species will also enable engines to run leaner (i.e. more fuel efficient) while still meeting the anti-pollution requirements. Our proposed technology is promising in the field of automotive sensors. It based on AlGaN/GaN high electron mobility transistor (HEMT) sensors incorporating highly porous platinum in the gate. Compared to platinum full gate AlGaN/GaN HEMT sensor, the Highly porous gate sensor has dramatically improved current response to O2, NO, NO2 H2 and NH3, to the NO concentration in the range of 0–2000 ppm, 0-2500 ppm NO2, 0-300 ppm NH3, (1.5-10%) H2 and O2 (1.5-100%) species at high temperature (500 °C). This improvement in sensitivity is the result of the increase in catalytic surface area interaction between gas and platinum.Show less >
Show more >The real-time knowledge of the NO, NO2 and NH3 concentration at high temperature, would allow manufacturers of automobiles to meet the upcoming stringent EURO7 anti-pollution measures for diesel engines. Knowledge of the concentration of each of these species will also enable engines to run leaner (i.e. more fuel efficient) while still meeting the anti-pollution requirements. Our proposed technology is promising in the field of automotive sensors. It based on AlGaN/GaN high electron mobility transistor (HEMT) sensors incorporating highly porous platinum in the gate. Compared to platinum full gate AlGaN/GaN HEMT sensor, the Highly porous gate sensor has dramatically improved current response to O2, NO, NO2 H2 and NH3, to the NO concentration in the range of 0–2000 ppm, 0-2500 ppm NO2, 0-300 ppm NH3, (1.5-10%) H2 and O2 (1.5-100%) species at high temperature (500 °C). This improvement in sensitivity is the result of the increase in catalytic surface area interaction between gas and platinum.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Source :