Title :

Surface micromachining of chip-edge silicon microcantilevers using xenon difluoride etching of silicon-on-insulator

Author(s) :

Lerond, Thomas [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Yarekha, Dmitri [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Avramovic, Vanessa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Melin, Thierry [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Arscott, S. [Auteur]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Journal of Micromechanics and Microengineering

Pages :

085001

Publisher :

IOP Publishing

Publication date :

2021-08

ISSN :

0960-1317

English keyword(s) :

surface micromachining
xenon difluoride
silicon microtechnology
microcantilever
microelectromechanical systems
fabrication technology
prototyping

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We demonstrate a straightforward surface micromachining process for the rapid prototyping of thin 'chip-edge' silicon microcantilevers protruding from the edge of a silicon-on-insulator (SOI) chip. The process uses a single ...
Show more >We demonstrate a straightforward surface micromachining process for the rapid prototyping of thin 'chip-edge' silicon microcantilevers protruding from the edge of a silicon-on-insulator (SOI) chip. The process uses a single photolithographic mask-with xenon difluoride used to both pattern the silicon microcantilevers and release them by etching part of the underlying silicon wafer. During the release step, the silicon microcantilevers are protected from the xenon difluoride by a combination of photoresist and buried silicon dioxide. The use of common microfabrication materials (SOI and positive photoresist) and chemicals (buffered hydrofluoric acid and xenon difluoride), along with a maximum process temperature of 100 °C, makes for a generic, soft micromachining process which is-in principle-compatible with preserving the integrity of any pre-patterned circuitry present on the silicon microcantilever top surface. Doppler vibrometry measurements of the silicon microcantilevers reveal a well-defined resonant frequency and a quality factor comparable with that of similar silicon microcantilevers fabricated using other means. Our enabling technological process allows the rapid prototyping of chip-edge silicon microcantilevers-potentially integrating sensitive circuitry for novel probe technologies-by avoiding the relatively cumbersome, expensive, and potentially circuit-damaging front-to-back processing/deep etching combination.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Fabrication de leviers de microscopie à force atomique pour des applications de spectroscopie Raman à exaltation de pointe

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2021-11-13T05:06:31Z