Impact of III-nitride/Si interface ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Impact of III-nitride/Si interface preconditioning on breakdown voltage in GaN-on-silicon HEMT
Auteur(s) :
Khediri, Abdelkrim [Auteur]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Centre de Développement des Technologies Avancées [CDTA]
Talbi, Abbasia [Auteur]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Jaouad, Abdelatif [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Maher, Hassan [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Soltani, Ali [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Centre de Développement des Technologies Avancées [CDTA]
Talbi, Abbasia [Auteur]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Jaouad, Abdelatif [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Maher, Hassan [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Soltani, Ali [Auteur]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Titre de la revue :
Micromachines
Pagination :
1284
Éditeur :
MDPI
Date de publication :
2021-10-21
ISSN :
2072-666X
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source ...
Lire la suite >In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V. The device has been modeled using numerical simulations to reproduce output and transfer characteristics. We identify, via experimental results and TCAD simulations, the main physical mechanisms responsible for the premature breakdown. The contribution of the AlN/Silicon substrate interface to the premature off-state breakdown is pointed out. Vertical leakage in lateral GaN devices significantly contributes to the off-state breakdown at high blocking voltages. The parasitic current path leads to premature breakdown before the appearance of avalanche or dielectric breakdown. A comparative study between a MOS-HEMT GaN on a silicon substrate with and without a SiNx interlayer at the AlN/Silicon substrate interface is presented here. We show that it is possible to increase the breakdown voltages of the fabricated transistors on a silicon substrate using SiNx interlayer.Lire moins >
Lire la suite >In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V. The device has been modeled using numerical simulations to reproduce output and transfer characteristics. We identify, via experimental results and TCAD simulations, the main physical mechanisms responsible for the premature breakdown. The contribution of the AlN/Silicon substrate interface to the premature off-state breakdown is pointed out. Vertical leakage in lateral GaN devices significantly contributes to the off-state breakdown at high blocking voltages. The parasitic current path leads to premature breakdown before the appearance of avalanche or dielectric breakdown. A comparative study between a MOS-HEMT GaN on a silicon substrate with and without a SiNx interlayer at the AlN/Silicon substrate interface is presented here. We show that it is possible to increase the breakdown voltages of the fabricated transistors on a silicon substrate using SiNx interlayer.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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