Dielectric Passivation and Edge Effects ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
Author(s) :
Orfao, B. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Vasallo, B. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Perez, S. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Mateos, J. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Moro-Melgar, D. [Auteur]
Zaknoune, Mohammed [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Gonzalez, T. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Departamento de Fisica Aplicada [Salamanca]
Vasallo, B. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Perez, S. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Mateos, J. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Moro-Melgar, D. [Auteur]
Zaknoune, Mohammed [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Gonzalez, T. [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Journal title :
IEEE Transactions on Electron Devices
Pages :
4296-4301
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2021
ISSN :
0018-9383
English keyword(s) :
Dielectric passivation
edge effects (EEs)
Monte Carlo (MC)
permittivity
Schottky barrier diodes (SBDs)
edge effects (EEs)
Monte Carlo (MC)
permittivity
Schottky barrier diodes (SBDs)
HAL domain(s) :
Sciences de l'ingénieur [physics]/Electronique
English abstract : [en]
The influence of passivation on the edge effects (EEs) present in the capacitance-voltage ( C- V) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is analyzed by means of Monte Carlo simulations. ...
Show more >The influence of passivation on the edge effects (EEs) present in the capacitance-voltage ( C- V) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is analyzed by means of Monte Carlo simulations. The enhancement of the performance of SBDs as frequency multipliers is based on the optimization of the nonlinearity of the C- V curve, where EEs, strongly influenced by the dielectric passivation of the diode, play a significant role and must be carefully considered. The extra capacitance associated with EEs is affected by the presence of surface charges at the semiconductor/dielectric interface, which is considered by means of a self-consistent model in which the local value of the surface charge is updated according to the surrounding electron density. Our results indicate that, in realistic SBD geometries, a higher dielectric constant of the passivation material leads to more pronounced EEs. The thickness of the dielectric and the lateral extension of the epilayer are also important parameters to be taken into account when dealing with EEs.Show less >
Show more >The influence of passivation on the edge effects (EEs) present in the capacitance-voltage ( C- V) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is analyzed by means of Monte Carlo simulations. The enhancement of the performance of SBDs as frequency multipliers is based on the optimization of the nonlinearity of the C- V curve, where EEs, strongly influenced by the dielectric passivation of the diode, play a significant role and must be carefully considered. The extra capacitance associated with EEs is affected by the presence of surface charges at the semiconductor/dielectric interface, which is considered by means of a self-consistent model in which the local value of the surface charge is updated according to the surrounding electron density. Our results indicate that, in realistic SBD geometries, a higher dielectric constant of the passivation material leads to more pronounced EEs. The thickness of the dielectric and the lateral extension of the epilayer are also important parameters to be taken into account when dealing with EEs.Show less >
Language :
Anglais
Popular science :
Non
Source :
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