Title :

Strong and weak polarization-dependent interactions in connected and disconnected plasmonic nanostructures

Author(s) :

Eschimèse, Damien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vaurette, François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Ha, Céline [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Arscott, Steve [Auteur]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Melin, Thierry [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Leveque, Gaetan [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]

Journal title :

Nanoscale Advances

Pages :

1173-1181

Publisher :

RSC

Publication date :

2022-01-10

ISSN :

2516-0230

HAL domain(s) :

Chimie/Matériaux
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

We explore numerically and experimentally the formation of hybridized modes between a bright mode displayed by a gold nanodisc and either dark or bright modes of a nanorod – both elements being either separated by a ...
Show more >We explore numerically and experimentally the formation of hybridized modes between a bright mode displayed by a gold nanodisc and either dark or bright modes of a nanorod – both elements being either separated by a nanometer-size gap (disconnected system) or relied on a metal junction (connected system). In terms of modeling, we compare the scattering or absorption spectra and field distributions obtained under oblique-incidence plane wave illumination with quasi-normal mode computation and an analytical model based on a coupled oscillator model. Both connected and disconnected systems have very different plasmon properties in longitudinal polarization. The disconnected system can be consistently understood in terms of the nature of hybridized modes and coupling strength using either QNMs or coupled oscillator model; however the connected configuration presents intriguing peculiarities based on the strong redistribution of charges implied by the presence of the metal connection. In practice, the fabrication of disconnected or connected configurations depends on the mitigation of lithographic proximity effects inherent to top-down lithography methods, which can lead to the formation of small metal junctions, while careful lithographic dosing allows one to fabricate disconnected systems with a gap as low as 20 nm. We obtained a very good agreement between experimentally measured scattering spectra and numerical predictions. The methods and analyses presented in this work can be applied to a wide range of systems, for potential applications in light–matter interactions, biosensing or strain monitoring.Show less >

Language :

Anglais

Popular science :

Non

ANR Project :

Fabrication de leviers de microscopie à force atomique pour des applications de spectroscopie Raman à exaltation de pointe

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL