Titre :

RF reactive sputtering AlN thin film at room temperature for CMOS-compatible MEMS application

Auteur(s) :

Liu, Wen-Juan [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Xu, Wei Jiang [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Transduction, Propagation et Imagerie Acoustique - IEMN [TPIA - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wang, Weizhen [Auteur]
State Key Laboratory of ASIC and System
He, Le-Ming [Auteur]
State Key Laboratory of ASIC and System
Zhou, Jia [Auteur]
State Key Laboratory of ASIC and System
Radhakrishnan, K. [Auteur]
Nanyang Technological University [Singapour] [NTU]
Yu, Hao [Auteur]
Nanyang Technological University [Singapour] [NTU]
Ren, Jun-Yan [Auteur]
State Key Laboratory of ASIC and System

Titre de la manifestation scientifique :

2017 Joint IEEE International Symposium on the Applications of Ferroelectrics (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)

Ville :

Atlanta

Pays :

Etats-Unis d'Amérique

Date de début de la manifestation scientifique :

2017-05-07

Éditeur :

IEEE

Mot(s)-clé(s) en anglais :

"Aluminum nitride"
"III-V semiconductor materials"
"Substrates"
"Sputtering"
"Silicon"
"Electrodes"
"Surface treatment"

Discipline(s) HAL :

Sciences de l'ingénieur [physics]
Physique [physics]
Informatique [cs]

Résumé en anglais : [en]

Aluminum nitride (AlN) is widely used in SAW/FBAR devices, energy harvesting, biosensors, and ultrasonic transducers. The preparation of high-quality AlN film plays the key role on the process integration with CMOS circuits. ...
Lire la suite >Aluminum nitride (AlN) is widely used in SAW/FBAR devices, energy harvesting, biosensors, and ultrasonic transducers. The preparation of high-quality AlN film plays the key role on the process integration with CMOS circuits. Here, we report an AlN thin film prepared by RF reactive sputtering at room temperature on substrate with different treatments, which is more suitable and economical for CMOS-compatible MEMS fabrication compared with previous works. The AlN thin film was deposited on Si/SiO 2 /Si 3 N 4 with different surface roughness, which were commonly employed as insulating layers or device layers in CMOS circuits. The morphological characterization by AFM and SEM showed that the AlN thin film was uniform and compact with low roughness and fine grain. The bottom Mo electrode was prepared by DC sputtering at room temperature. In addition, AlN seed layer from the same sputtering process increased the adhesion between the electrode and the substrate, thereby improving the stability of subsequent processes. In summary, we prepared uniform AlN with few defects by a simple and controllable approach. This strategy is potentially applied to CMOS-compatible optical and acoustic devicesLire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL