Active Ultrahigh‐Q (0.2×10^6) THz Topological ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Active Ultrahigh‐Q (0.2×10^6) THz Topological Cavities on a Chip
Auteur(s) :
Kumar, Abhishek [Auteur]
Thérapies Laser Assistées par l'Image pour l'Oncologie - U 1189 [ONCO-THAI]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Gupta, Manoj [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Pitchappa, Prakash [Auteur]
Agency for science, technology and research [Singapore] [A*STAR]
Tan, Thomas Caiwei [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Chattopadhyay, Udvas [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Ducournau, Guillaume [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Wang, Nan [Auteur]
Chalmers University of Technology [Göteborg]
Agency for science, technology and research [Singapore] [A*STAR]
Chong, Yidong [Auteur]
Nanyang Technological University [Singapour]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Singh, Ranjan [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Thérapies Laser Assistées par l'Image pour l'Oncologie - U 1189 [ONCO-THAI]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Gupta, Manoj [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Pitchappa, Prakash [Auteur]
Agency for science, technology and research [Singapore] [A*STAR]
Tan, Thomas Caiwei [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Chattopadhyay, Udvas [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Ducournau, Guillaume [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Wang, Nan [Auteur]
Chalmers University of Technology [Göteborg]
Agency for science, technology and research [Singapore] [A*STAR]
Chong, Yidong [Auteur]
Nanyang Technological University [Singapour]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Singh, Ranjan [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Titre de la revue :
Advanced Materials
Pagination :
2202370
Éditeur :
Wiley-VCH Verlag
Date de publication :
2022-05-14
ISSN :
0935-9648
Mot(s)-clé(s) en anglais :
6G communication
THz photonics
THz topological integrated circuits (TTICs)
on-chip modulators
quantum and topological photonics
ultrahigh-Q cavities.
THz photonics
THz topological integrated circuits (TTICs)
on-chip modulators
quantum and topological photonics
ultrahigh-Q cavities.
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer ...
Lire la suite >Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer electronics. To meet this burgeoning demand, an improved interconnect capacity in terms of bandwidth density and active tunability is required for enhanced throughput and energy efficiency. Low-loss terahertz silicon interconnects with larger bandwidth offer a solution for the existing inter-/intrachip bandwidth density and energy-efficiency bottleneck. Here, a low-loss terahertz topological interconnect–cavity system is presented that can actively route signals through sharp bends, by critically coupling to a topological cavity with an ultrahigh-quality (Q) factor of 0.2 × 106. The topologically protected large Q factor cavity enables energy-efficient optical control showing 60 dB modulation. Dynamic control is further demonstrated of the critical coupling between the topological interconnect–cavity for on-chip active tailoring of the cavity resonance linewidth, frequency, and modulation through complete suppression of the back reflection. The silicon topological cavity is complementary metal–oxide–semiconductor (CMOS)-compatible and highly desirable for hybrid electronic–photonic technologies for sixth (6G) generation terahertz communication devices. Ultrahigh-Q cavity also paves the path for designing ultrasensitive topological sensors, terahertz topological integrated circuits, and nonlinear topological photonic devices.Lire moins >
Lire la suite >Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer electronics. To meet this burgeoning demand, an improved interconnect capacity in terms of bandwidth density and active tunability is required for enhanced throughput and energy efficiency. Low-loss terahertz silicon interconnects with larger bandwidth offer a solution for the existing inter-/intrachip bandwidth density and energy-efficiency bottleneck. Here, a low-loss terahertz topological interconnect–cavity system is presented that can actively route signals through sharp bends, by critically coupling to a topological cavity with an ultrahigh-quality (Q) factor of 0.2 × 106. The topologically protected large Q factor cavity enables energy-efficient optical control showing 60 dB modulation. Dynamic control is further demonstrated of the critical coupling between the topological interconnect–cavity for on-chip active tailoring of the cavity resonance linewidth, frequency, and modulation through complete suppression of the back reflection. The silicon topological cavity is complementary metal–oxide–semiconductor (CMOS)-compatible and highly desirable for hybrid electronic–photonic technologies for sixth (6G) generation terahertz communication devices. Ultrahigh-Q cavity also paves the path for designing ultrasensitive topological sensors, terahertz topological integrated circuits, and nonlinear topological photonic devices.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :