Title :

Monolayer molybdenum disulfide switches for 6G communication systems

Author(s) :

Kim, Myungsoo [Auteur]
University of Texas at Austin [Austin]
Ulsan National Institute of Science and Technology [UNIST]
Ducournau, Guillaume [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Skrzypczak, Simon [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Carbon - IEMN [CARBON - IEMN]
Yang, Sung Jin [Auteur]
University of Texas at Austin [Austin]
Szriftgiser, Pascal [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Wainstein, Nicolas [Auteur]
Technion - Israel Institute of Technology [Haifa]
Stern, Keren [Auteur]
Technion - Israel Institute of Technology [Haifa]
Happy, Henri [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Carbon - IEMN [CARBON - IEMN]
Yalon, Eilam [Auteur]
Technion - Israel Institute of Technology [Haifa]
Pallecchi, Emiliano [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Carbon - IEMN [CARBON - IEMN]
Akinwande, Deji [Auteur]
University of Texas at Austin [Austin]

Journal title :

Nature Electronics

Pages :

367–373

Publisher :

Springer Nature

Publication date :

2022

ISSN :

2520-1131

English keyword(s) :

Electrical and electronic engineering
Electronic devices
Two-dimensional materials

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

Atomically thin two-dimensional materials—including transitional metal dichalcogenides and hexagonal boron nitride—can exhibit non-volatile resistive switching. This switching behaviour could be used to create analogue ...
Show more >Atomically thin two-dimensional materials—including transitional metal dichalcogenides and hexagonal boron nitride—can exhibit non-volatile resistive switching. This switching behaviour could be used to create analogue switches for use in high-frequency communication, but has so far been limited to frequencies relevant to the fifth generation of wireless communication technology. Here we show that non-volatile switches made from monolayer molybdenum disulfide in a metal–insulator–metal structure can operate at frequencies corresponding to the sixth-generation communication band (around 100–500 GHz). The switches exhibit low insertion loss in the ON state and high isolation in the OFF state up to 480 GHz with sub-nanosecond pulse switching. We obtain the eye diagrams and constellation diagrams at various data transmission rates and modulations to evaluate the device performance, including real-time data communication up to 100 Gbit s−1 at a carrier frequency of 320 GHz, with a low bit error rate and high signal-to-noise ratio.Show less >

Language :

Anglais

Popular science :

Non

ANR Project :

SWItches à base de dichalcogénures de métaux de transition pour des applications RF
Transmissions TERAhertz combinant électronique état SOlide et photoNIQue
Multiplexage SPATIal en gamme térahertz pour les cOmmunications sans fil à 1 TERAbit/s
Investissements en NANOfabrication pour les nanotechnologies du FUTUR

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL