Title :

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Author(s) :

Abid, Idriss [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Hamdaoui, Youssef [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Mehta, Jash Rinku [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Derluyn, Joff [Auteur]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]

Journal title :

Micromachines
III–V Compound Semiconductors and Devices

Pages :

1519

Publisher :

MDPI

Publication date :

2022

ISSN :

2072-666X

English keyword(s) :

high-electron-mobility transistor (HEMT)
GaN
normally off

HAL domain(s) :

Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) ...
Show more >We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than +1 V. The buffer structure was based on AlN/GaN superlattices (SLs), delivering a vertical breakdown voltage close to 1.5 kV with a low leakage current all the way to 1200 V. With the grounded substrate, the hard breakdown voltage transistors at VGS = 0 V is 1.45 kV, corresponding to an outstanding average vertical breakdown field higher than 2.4 MV/cm. High-voltage characterizations revealed a state-of-the-art combination of breakdown voltage at VGS = 0 V together with low buffer electron trapping effects up to 1.4 kV, as assessed by means of substrate ramp measurements.Show less >

Language :

Anglais

Popular science :

Non

ANR Project :

Réseau national sur GaN

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL