Dual-Band Patch Filter 180/270 GHz on BiCMOS 55nm
Type de document :
Communication dans un congrès avec actes
Titre :
Dual-Band Patch Filter 180/270 GHz on BiCMOS 55nm
Auteur(s) :
Wehbi, Mohammed [Auteur correspondant]
Reliable RF and Mixed-signal Systems [TIMA-RMS]
Margalef-Rovira, Marc [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Durand, Cedric [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Lepilliet, sl [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Serrano, Ariana L.C. [Auteur]
Polytechnic School [São Paulo]
Ferrari, Philippe [Auteur]
Reliable RF and Mixed-signal Systems [TIMA-RMS]
Reliable RF and Mixed-signal Systems [TIMA-RMS]
Margalef-Rovira, Marc [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Durand, Cedric [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Lepilliet, sl [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Serrano, Ariana L.C. [Auteur]
Polytechnic School [São Paulo]
Ferrari, Philippe [Auteur]
Reliable RF and Mixed-signal Systems [TIMA-RMS]
Titre de la manifestation scientifique :
2022 IEEE/MTT-S International Microwave Symposium, IMS 2022
Ville :
Denver
Pays :
Etats-Unis d'Amérique
Date de début de la manifestation scientifique :
2022-06-19
Éditeur :
IEEE
Mot(s)-clé(s) en anglais :
BiCMOS technology
DualBand
millimeter-waves
Patch filter
DualBand
millimeter-waves
Patch filter
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
This paper presents an original design for dual-band dual-mode bandpass filter based on a single grounded patch resonator. It is implemented on BiCMOS 55 nm technology to operate at 180 GHz and 270 GHz. A full control of ...
Lire la suite >This paper presents an original design for dual-band dual-mode bandpass filter based on a single grounded patch resonator. It is implemented on BiCMOS 55 nm technology to operate at 180 GHz and 270 GHz. A full control of both bands is possible - thanks to the usage of vias and slots. The grounded vias significantly allow the reduction of the patch resonator realizing an overall size of 0.04 mm2, which is a fundamental aspect for (Bi)CMOS. The achieved results show a good agreement between simulation and measurement results with insertion loss of 4-5 dB in the passband, return loss of 14 dB and relative bandwidths of about 18%.Lire moins >
Lire la suite >This paper presents an original design for dual-band dual-mode bandpass filter based on a single grounded patch resonator. It is implemented on BiCMOS 55 nm technology to operate at 180 GHz and 270 GHz. A full control of both bands is possible - thanks to the usage of vias and slots. The grounded vias significantly allow the reduction of the patch resonator realizing an overall size of 0.04 mm2, which is a fundamental aspect for (Bi)CMOS. The achieved results show a good agreement between simulation and measurement results with insertion loss of 4-5 dB in the passband, return loss of 14 dB and relative bandwidths of about 18%.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :