Title :

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-on-SiC HEMTs by Means of a Thin AlGaN Back Barrier

Author(s) :

Harrouche, Kathia [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Venkatachalam, Srisaran [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Ben-Hammou, Lyes [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Grandpierron, François [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]

Journal title :

Micromachines

Pages :

291

Publisher :

MDPI

Publication date :

2023-01-22

ISSN :

2072-666X

English keyword(s) :

GaN HEMT AlGaN back barrier DIBL load-pull PAE output power density
GaN
HEMT
AlGaN back barrier
DIBL
load-pull
PAE
output power density

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a nonintentionally doped GaN channel layer, enabling ...
Show more >In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a nonintentionally doped GaN channel layer, enabling the prevention of punch-through effects and related drain leakage current under a high electric field while using a moderate carbon concentration into the buffer. By carefully tuning the Al concentration into the back barrier layer, the optimized heterostructure offers a unique combination of electron confinement and low trapping effects up to high drain bias for a gate length as short as 100 nm. Consequently, pulsed (CW) Load-Pull measurements at 40 GHz revealed outstanding performances with a record power-added efficiency of 70% (66%) under high output power density at VDS = 20 V. These results demonstrate the interest of this approach for future millimeter-wave applications.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Réseau national sur GaN

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL