Titre :

Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers

Auteur(s) :

Strenaer, R. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Guhel, Y. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Gaquiere, C. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Boudart, B. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072

Titre de la revue :

Microelectronics Reliability

Pagination :

115156

Éditeur :

Elsevier

Date de publication :

2023-11

ISSN :

0026-2714

Mot(s)-clé(s) en anglais :

GaN-based devices
Thermal characterization
Transient self-heating temperature
Raman spectroscopy
micro-Raman thermometers

Discipline(s) HAL :

Physique [physics]
Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

The DC and RF electrical performance and reliability of GaN-based transistors depend on their thermal behavior. Therefore, measuring the self-heating temperature of these devices under real operating conditions with high ...
Lire la suite >The DC and RF electrical performance and reliability of GaN-based transistors depend on their thermal behavior. Therefore, measuring the self-heating temperature of these devices under real operating conditions with high accuracy is an important and challenging issue. For these reasons, we present a time-resolved thermometry technique to measure transient self-heating temperatures in semiconductor components by combining conventional Raman spectroscopy and CeO2 Raman micro-thermometers. Thus, the experimental GaN volumetric and surface self-heating temperatures measured for biased AlInN/GaN HEMTs in both DC and pulsed regime are reported with a submicrometer spatial resolution and a temperature resolution of about 5 °C. Likewise time-resolved self-heating temperature of drain contact surface has also been studied.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Date de dépôt :

2023-12-06T04:33:20Z