Titre :

A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models

Auteur(s) :

Boubaker, A. [Auteur]
Hafsi, B. [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lmimouni, Kamal [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kalboussi, A. [Auteur]

Titre de la revue :

Journal of Materials Science: Materials in Electronics

Pagination :

7834-7843

Éditeur :

Springer Verlag

Date de publication :

2017-02-16

ISSN :

0957-4522

Mot(s)-clé(s) en anglais :

High Occupied Molecular Orbital, Lower Unoccupied Molecular Orbital, Pentacene, Interface Trap, Trap Concentration

Discipline(s) HAL :

Physique [physics]

Résumé en anglais : [en]

Pentacene and PolyeraTM N2200 based-organic field effect transistors (OFETs), have been fabricated and simulated in a bottom-gate/back contacts configuration. The simulations were processed with the help of 2D drift-diffusion ...
Lire la suite >Pentacene and PolyeraTM N2200 based-organic field effect transistors (OFETs), have been fabricated and simulated in a bottom-gate/back contacts configuration. The simulations were processed with the help of 2D drift-diffusion model. Comparison and analysis of the electrical characteristics of both n- and p-channel OFETs have been investigated. The study was centred on the electrical performance of every structure in term of mobility, fixed charge at the oxide/semiconductor interface and bulk traps density and its related energy. The dependence of the transfer characteristic on the grain boundaries traps state, in the case of pentacene, has been also outlined. Comparison between the simulation results and our experimental data show a good agreement. We finally present how our model can be applied to different devices with different channel length and we analyse their relationship with extracted electrical parameters.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL