Blocking of indium incorporation by antimony ...
Document type :
Article dans une revue scientifique
Permalink :
Title :
Blocking of indium incorporation by antimony in III–V-Sb nanostructures
Author(s) :
Sanchez, A M [Auteur]
Universidad de Cádiz = University of Cádiz [UCA]
Beltran, A M [Auteur]
Universidad de Cádiz = University of Cádiz [UCA]
Beanland, R [Auteur]
University of Warwick [Coventry]
Ben, T [Auteur]
Universidad de Cádiz = University of Cádiz [UCA]
Gass, M H [Auteur]
de la Peña, Francisco [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Walls, M [Auteur]
Taboada, A G [Auteur]
Ripalda, J M [Auteur]
Molina, S I [Auteur]
Universidad de Cádiz = University of Cádiz [UCA]
Beltran, A M [Auteur]
Universidad de Cádiz = University of Cádiz [UCA]
Beanland, R [Auteur]
University of Warwick [Coventry]
Ben, T [Auteur]
Universidad de Cádiz = University of Cádiz [UCA]
Gass, M H [Auteur]
de la Peña, Francisco [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Walls, M [Auteur]
Taboada, A G [Auteur]
Ripalda, J M [Auteur]
Molina, S I [Auteur]
Journal title :
Nanotechnology
Abbreviated title :
Nanotechnology
Volume number :
21
Pages :
145606
Publisher :
IOP Publishing
Publication date :
2010-03-10
ISSN :
0957-4484
HAL domain(s) :
Chimie/Matériaux
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Physique [physics]/Physique [physics]/Géophysique [physics.geo-ph]
Physique [physics]/Astrophysique [astro-ph]
Planète et Univers [physics]/Astrophysique [astro-ph]
Planète et Univers [physics]/Sciences de la Terre
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Physique [physics]/Physique [physics]/Géophysique [physics.geo-ph]
Physique [physics]/Astrophysique [astro-ph]
Planète et Univers [physics]/Astrophysique [astro-ph]
Planète et Univers [physics]/Sciences de la Terre
English abstract : [en]
The addition of antimony to III–V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface ...
Show more >The addition of antimony to III–V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.Show less >
Show more >The addition of antimony to III–V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.Show less >
Language :
Anglais
Audience :
Internationale
Popular science :
Non
Administrative institution(s) :
Université de Lille
CNRS
INRAE
ENSCL
CNRS
INRAE
ENSCL
Collections :
Research team(s) :
Matériaux Terrestres et Planétaires
Submission date :
2024-02-01T14:11:57Z
2024-02-02T10:44:30Z
2024-02-02T10:44:30Z