[Invited] Pushing the breakdown voltage and temperature capabilities of GaN HEMTs by using UWBG Al-rich channel

Medjdoub, Farid

Type de document :

Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes: Conférence invitée

Titre :

[Invited] Pushing the breakdown voltage and temperature capabilities of GaN HEMTs by using UWBG Al-rich channel

Auteur(s) :

Medjdoub, Farid [Auteur]

WIde baNd gap materials and Devices - IEMN [WIND - IEMN]

Titre de la manifestation scientifique :

European Materials Research Society Fall 2023 (EMRS-2023)

Ville :

Warsaw

Pays :

Pologne

Date de début de la manifestation scientifique :

2023-09-18

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures. Commercial GaN power devices are best available for ...
Lire la suite >The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures. Commercial GaN power devices are best available for radio frequency (RF) and high voltage switching applications. Emerging AlxGa1-xN channel based heterostructures are promising to enhance the limits of next generation high voltage GaN power switching devices. AlxGa1-xN heterojunction FETs (HFETs) have been an eye catcher for high voltage power electronics with its potential to outperform the predecessors by virtue of high critical breakdown field of the material, which can be tuned by varying Al mole-fraction. In this presentation, we will report on electrical performances of AlGaN channel HEMTs on both bulk AlN and silicon substrate using various Al content. The fabricated devices exhibited outstanding buffer breakdown electric field above 2.5 MV/cm considering the submicron thin heterostructures grown on silicon substrate. Furthermore, we also experimentally demonstrate high temperature operation of fabricated AlGaN channel HEMTs. AlGaN channel HFETs on bulk AlN with a maximum drain current density > 300 mA/mm and a specific Ron = 4 mΩ.cm 2. A buffer electric breakdown field >10 MV/cm was measured. A high voltage robustness comparison of AlGaN channel HFETs and thin GaN HFETs close to their respective hard breakdown voltages is also investigated, which reveals the superior reliable operation of AlGaN channel HFETs up to 80% of hard breakdown voltages along with a consistent ION/IOFF ratio subsequent to 2000V voltage sweep.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Projet ANR :

Réseau national sur GaN

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

[Invited] Pushing the breakdown voltage ... BibTeX CSV Excel RIS

[Invited] Pushing the breakdown voltage ...

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