[Invited] Highly efficiency and reliable mm-wave AlN/GaN transistors

Medjdoub, Farid

Type de document :

Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes: Conférence invitée

Titre :

[Invited] Highly efficiency and reliable mm-wave AlN/GaN transistors

Auteur(s) :

Medjdoub, Farid [Auteur]

WIde baNd gap materials and Devices - IEMN [WIND - IEMN]

Titre de la manifestation scientifique :

XXII International Workshop on Physics of Semiconductor Devices

Organisateur(s) de la manifestation scientifique :

Indian Institute of Technology Madras
Society for Semiconductor Devices (SSD) Semiconductor Society (India)

Ville :

Madras

Pays :

Inde

Date de début de la manifestation scientifique :

2023-12-13

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Electronique

Résumé en anglais : [en]

Power-added-efficiency (PAE) becomes a key parameter in order to support complex waveforms with high peak-to-average ratio and large instantaneous bandwidth required for 5G applications for instance. Overall, a high PAE ...
Lire la suite >Power-added-efficiency (PAE) becomes a key parameter in order to support complex waveforms with high peak-to-average ratio and large instantaneous bandwidth required for 5G applications for instance. Overall, a high PAE is mandatory in order to reduce the power dissipation, which is a major issue for future compact solid-state power amplifiers. GaN-based High electron mobility transistors (HEMTs) on SiC substrate have already demonstrated attractive efficiencies in the mm-wave range. However, state-of-the-art GaN HEMT PAE performances are typically limited to 50% or below in the Ka-band and above, especially for high power densities > 3 W/mm. This is mainly due to the lack of power gain, the enhanced trapping effects and reduced electron confinement when downscaling the device size. In this talk, promising solutions based on highly scaled epitaxial heterostructures will be addressed, enabling mm-wave high performances and robustness.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Projet ANR :

Réseau national sur GaN

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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