Application of scanning electron diffraction ...
Document type :
Article dans une revue scientifique: Article original
DOI :
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Title :
Application of scanning electron diffraction in the transmission electron microscope for the characterisation of dislocations in minerals
Author(s) :
NZOGANG, Billy Clitton [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Mussi, Alexandre [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Cordier, Patrick [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Mussi, Alexandre [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Cordier, Patrick [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Journal title :
Mineralogical Magazine
Abbreviated title :
MinMag
Volume number :
83
Pages :
71-79
Publisher :
Mineralogical Society
Publication date :
2018-07-30
HAL domain(s) :
Chimie
English abstract : [en]
We present an application of scanning electron diffraction for the characterisation of crystal defects in olivine, quartz and phase A (a high pressure hydrated phase). In this mode, which takes advantage of the ASTAR™ ...
Show more >We present an application of scanning electron diffraction for the characterisation of crystal defects in olivine, quartz and phase A (a high pressure hydrated phase). In this mode, which takes advantage of the ASTAR™ module from NanoMEGAS, a slightly convergent probe is scanned over the sample with a short acquisition time (a few tens of ms) and the spot patterns are acquired and stored for further post-processing. Originally, orientation maps were constructed from automatic indexing at each probe location. Here we present another application where images are reconstructed from the intensity of diffraction spots, producing either so-called ‘virtual’ bright- or dark-field images. We show that these images present all the characteristics of contrast (perfect crystal or defects) of conventional transmission electron microscopy images. Data are acquired with a very short time per probe location (a few tens of milliseconds), this technique appears very attractive for the characterisation of beam-sensitive materials. However, as the acquisition is done at a given orientation, fine tuning of the diffraction conditions at a given location for each reflection is not possible. This might present a difficulty for some precise, quantitative contrast analysis.Show less >
Show more >We present an application of scanning electron diffraction for the characterisation of crystal defects in olivine, quartz and phase A (a high pressure hydrated phase). In this mode, which takes advantage of the ASTAR™ module from NanoMEGAS, a slightly convergent probe is scanned over the sample with a short acquisition time (a few tens of ms) and the spot patterns are acquired and stored for further post-processing. Originally, orientation maps were constructed from automatic indexing at each probe location. Here we present another application where images are reconstructed from the intensity of diffraction spots, producing either so-called ‘virtual’ bright- or dark-field images. We show that these images present all the characteristics of contrast (perfect crystal or defects) of conventional transmission electron microscopy images. Data are acquired with a very short time per probe location (a few tens of milliseconds), this technique appears very attractive for the characterisation of beam-sensitive materials. However, as the acquisition is done at a given orientation, fine tuning of the diffraction conditions at a given location for each reflection is not possible. This might present a difficulty for some precise, quantitative contrast analysis.Show less >
Language :
Anglais
Audience :
Non spécifiée
European Project :
Administrative institution(s) :
Université de Lille
CNRS
INRA
ENSCL
CNRS
INRA
ENSCL
Collections :
Research team(s) :
Plasticité
Submission date :
2019-04-03T12:47:18Z
2019-04-05T13:17:03Z
2019-04-09T14:30:35Z
2019-04-30T11:18:05Z
2019-04-05T13:17:03Z
2019-04-09T14:30:35Z
2019-04-30T11:18:05Z
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