Title :

Depth Profiling Charge Accumulation from a Ferroelectric into a Doped Mott Insulator

Author(s) :

Marinova, Maya [Auteur]
Laboratoire de Physique des Solides [LPS]
Rault, Julien E. [Auteur]
Synchrotron SOLEIL [SSOLEIL]
Gloter, Alexandre [Auteur]
Laboratoire de Physique des Solides [LPS]
Nemsak, Slavomir [Auteur]
Palsson, Gunnar K. [Auteur]
Institut Laue-Langevin [ILL]
Rueff, Jean-Pascal [Auteur]
Synchrotron SOLEIL [SSOLEIL]
Fadley, Charles S. [Auteur]
Carrétéro, Cécile [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Yamada, Hiroyuki [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
March, Katia [Auteur]
Laboratoire de Physique des Solides [LPS]
Garcia, Vincent [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Fusil, Stéphane [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Barthélémy, Agnès [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Stéphan, Odile [Auteur]
Laboratoire de Physique des Solides [LPS]
Colliex, Christian [Auteur]
Laboratoire de Physique des Solides [LPS]
Bibes, Manuel [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)

Journal title :

Nano Letters

Volume number :

15

Pages :

2533-2541

Publication date :

2015

HAL domain(s) :

Chimie

English abstract : [en]

The electric field control of functional properties is a crucial goal in oxide-based electronics. Nonvolatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge ...
Show more >The electric field control of functional properties is a crucial goal in oxide-based electronics. Nonvolatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here, we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca1–xCexMnO3, thus providing insight on how interface-engineering can enhance these switching effects.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

European Project :

Enabling Science and Technology through European Electron Microscopy

ANR Project :

Nouvelles interfaces magnétoélectriques pour la spintronique faible puissance

Collections :

• Autres travaux scientifiques

Submission date :

2019-06-17T08:43:20Z
2020-03-09T17:25:08Z