Ferroelectric control of a Mott insulator
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Article dans une revue scientifique
DOI :
Permalink :
Title :
Ferroelectric control of a Mott insulator
Author(s) :
Yamada, Hiroyuki [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Marinova, Maya [Auteur]
Laboratoire de Physique des Solides [LPS]
Altuntas, Philippe [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Crassous, Arnaud [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Bégon-Lours, Laura [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Fusil, Stéphane [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Jacquet, Eric [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Garcia, Vincent [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Bouzehouane, Karim [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Gloter, Alexandre [Auteur]
Laboratoire de Physique des Solides [LPS]
Villegas, Javier E. [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Barthélémy, Agnès [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Bibes, Manuel [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Marinova, Maya [Auteur]

Laboratoire de Physique des Solides [LPS]
Altuntas, Philippe [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Crassous, Arnaud [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Bégon-Lours, Laura [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Fusil, Stéphane [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Jacquet, Eric [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Garcia, Vincent [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Bouzehouane, Karim [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Gloter, Alexandre [Auteur]
Laboratoire de Physique des Solides [LPS]
Villegas, Javier E. [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Barthélémy, Agnès [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Bibes, Manuel [Auteur]
Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
Journal title :
Scientific Reports
Volume number :
3
Pages :
1185
Publication date :
2013
HAL domain(s) :
Chimie
English abstract : [en]
The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte ...
Show more >The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its “supertetragonal” phase. Upon polarization reversal of the BiFeO3 gate, the CaMnO3 channel resistance shows a fourfold variation around room temperature and a tenfold change at ~200 K. This is accompanied by a carrier density modulation exceeding one order of magnitude. We have analyzed the results for various CaMnO3 thicknesses and explain them by the electrostatic doping of the CaMnO3 layer and the presence of a fixed dipole at the CaMnO3/BiFeO3 interface. Our results suggest the relevance of ferroelectric gates to control orbital- or spin-ordered phases, ubiquitous in Mott systems and pave the way toward efficient Mott-tronics devices.Show less >
Show more >The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its “supertetragonal” phase. Upon polarization reversal of the BiFeO3 gate, the CaMnO3 channel resistance shows a fourfold variation around room temperature and a tenfold change at ~200 K. This is accompanied by a carrier density modulation exceeding one order of magnitude. We have analyzed the results for various CaMnO3 thicknesses and explain them by the electrostatic doping of the CaMnO3 layer and the presence of a fixed dipole at the CaMnO3/BiFeO3 interface. Our results suggest the relevance of ferroelectric gates to control orbital- or spin-ordered phases, ubiquitous in Mott systems and pave the way toward efficient Mott-tronics devices.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Collections :
Submission date :
2019-06-17T08:43:23Z
2020-03-16T15:59:41Z
2020-03-16T15:59:41Z
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