Incorporation of group III, IV and V ...
Type de document :
Article dans une revue scientifique: Article original
URL permanente :
Titre :
Incorporation of group III, IV and V elements in 3C-SiC(111) layers grown by the vapour-liquid-solid mechanism
Auteur(s) :
Lorenzzi, Jean [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Zoulis, Georgios [Auteur]
Groupe d'étude des semiconducteurs [GES]
Marinova, Maya [Auteur]
Department of Physics [Thessaloniki]
Kim-Hak, Olivier [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Sun, Jian Wu [Auteur]
Groupe d'étude des semiconducteurs [GES]
Jegenyes, Nikoletta [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Peyre, H. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Cauwet, F. [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Chaudouët, Patrick [Auteur]
Laboratoire des matériaux et du génie physique [LMGP ]
Soueidan, Maher [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Carole, Davy [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Camassel, Jean [Auteur]
Groupe d'étude des semiconducteurs [GES]
Polychroniadis, Efstathios K. [Auteur]
Department of Physics [Thessaloniki]
Ferro, Gabriel [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Laboratoire des Multimatériaux et Interfaces [LMI]
Zoulis, Georgios [Auteur]
Groupe d'étude des semiconducteurs [GES]
Marinova, Maya [Auteur]
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Department of Physics [Thessaloniki]
Kim-Hak, Olivier [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Sun, Jian Wu [Auteur]
Groupe d'étude des semiconducteurs [GES]
Jegenyes, Nikoletta [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Peyre, H. [Auteur]
Groupe d'étude des semiconducteurs [GES]
Cauwet, F. [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Chaudouët, Patrick [Auteur]
Laboratoire des matériaux et du génie physique [LMGP ]
Soueidan, Maher [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Carole, Davy [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Camassel, Jean [Auteur]
Groupe d'étude des semiconducteurs [GES]
Polychroniadis, Efstathios K. [Auteur]
Department of Physics [Thessaloniki]
Ferro, Gabriel [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Titre de la revue :
Journal of Crystal Growth
Numéro :
312
Pagination :
3443-3450
Date de publication :
2010
Discipline(s) HAL :
Chimie/Matériaux
Résumé en anglais : [en]
We report on a comparative investigation of the incorporation of group III, IV and V impurities in 3C–SiC heteroepitaxial layers grown by the vapour–liquid–solid (VLS) mechanism on on-axis α-SiC substrates. To this end, ...
Lire la suite >We report on a comparative investigation of the incorporation of group III, IV and V impurities in 3C–SiC heteroepitaxial layers grown by the vapour–liquid–solid (VLS) mechanism on on-axis α-SiC substrates. To this end, various Si-based melts have been used with addition of Al, Ga, Ge and Sn species. Homoepitaxial α-SiC layers grown using Al-based melts were used for comparison purposed for Al incorporation. Nitrogen incorporation depth profile systematically displays an overshoot at the substrate/epilayer interface for all the layers. Ga and Al incorporations follow the same distribution shape as N whereas this is not the case for the isoelectronic impurities Ge and Sn. This suggests some interaction between Ga/Al and N coming from the high bonding energy between the group III and V elements, which does not exist with Ge and Sn. This is why both incorporate as a cluster. A model of incorporation is proposed taking into account metal-N and metal-C bonding energies together with the solid solubility of the corresponding nitrides.Lire moins >
Lire la suite >We report on a comparative investigation of the incorporation of group III, IV and V impurities in 3C–SiC heteroepitaxial layers grown by the vapour–liquid–solid (VLS) mechanism on on-axis α-SiC substrates. To this end, various Si-based melts have been used with addition of Al, Ga, Ge and Sn species. Homoepitaxial α-SiC layers grown using Al-based melts were used for comparison purposed for Al incorporation. Nitrogen incorporation depth profile systematically displays an overshoot at the substrate/epilayer interface for all the layers. Ga and Al incorporations follow the same distribution shape as N whereas this is not the case for the isoelectronic impurities Ge and Sn. This suggests some interaction between Ga/Al and N coming from the high bonding energy between the group III and V elements, which does not exist with Ge and Sn. This is why both incorporate as a cluster. A model of incorporation is proposed taking into account metal-N and metal-C bonding energies together with the solid solubility of the corresponding nitrides.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Collections :
Date de dépôt :
2019-06-17T08:43:25Z
2020-03-17T16:19:10Z
2020-03-17T16:19:10Z